Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/444
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Zhu, X | - |
dc.creator | Chong, N | - |
dc.creator | Chan, HLW | - |
dc.creator | Choy, CL | - |
dc.creator | Wong, KH | - |
dc.creator | Liu, Z | - |
dc.creator | Ming, N | - |
dc.date.accessioned | 2014-12-11T08:27:42Z | - |
dc.date.available | 2014-12-11T08:27:42Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/444 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Zhu et al. Appl. Phys. Lett. 80, 3376 (2002) and may be found at http://link.aip.org/link/?apl/80/3376 | en_US |
dc.subject | Barium compounds | en_US |
dc.subject | Strontium compounds | en_US |
dc.subject | Ferroelectric materials | en_US |
dc.subject | Ferroelectric thin films | en_US |
dc.subject | Stoichiometry | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | Vapour phase epitaxial growth | en_US |
dc.subject | Permittivity | en_US |
dc.subject | Dielectric losses | en_US |
dc.subject | Rutherford backscattering | en_US |
dc.subject | Capacitance | en_US |
dc.subject | Internal stresses | en_US |
dc.subject | Thin film capacitors | en_US |
dc.subject | Ferroelectric capacitors | en_US |
dc.title | Epitaxial growth and planar dielectric properties of compositionally graded (Ba[sub 1-x]Sr[sub x])TiO₃ thin films prepared by pulsed-laser deposition | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 3376 | - |
dc.identifier.epage | 3378 | - |
dc.identifier.volume | 80 | - |
dc.identifier.issue | 18 | - |
dc.identifier.doi | 10.1063/1.1475367 | - |
dcterms.abstract | We have heteroepitaxially deposited compositionally graded (Ba[1-x]Sr[sub x])TiO₃ (BST) thin films with increasing x from 0.0 to 0.25 on (100)-oriented MgO substrates using pulsed-laser deposition. The compositional gradients along the depth in the graded films were characterized by Rutherford backscattering spectroscopy. By using surface interdigital electrodes, the planar dielectric response of epitaxial graded BST films was measured as a function of frequency, temperature, and dc applied voltage. At room temperature, the dielectric constant of the graded BST film was about 450 with a dielectric loss, tan δ of 0.007 at 100 kHz. Measurements varying the dc bias voltage showed hysteresis of the dielectric response and a tunability of 25% at an applied electric field of 80 kV/cm. The graded BST films undergo a diffuse phase transition with a broad and flat profile of the capacitance versus temperature. Such behavior of the dielectric response in graded BST films is attributed to the presence of the compositional and/or residual strain gradients in the epitaxial graded films. With such a graded structure, it is possible to a build a dielectric thin-film capacitor with a low-temperature dependence of the capacitor over a broad temperature regime. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 6 May 2002, v. 80, no. 18, p.3376-3378 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2002-05-06 | - |
dc.identifier.isi | WOS:000175298400044 | - |
dc.identifier.scopus | 2-s2.0-79956045865 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r05971 | - |
dc.description.ros | 2001-2002 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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planar-dielectric_02.pdf | 126.04 kB | Adobe PDF | View/Open |
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