Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/442
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dc.contributorDepartment of Applied Physics-
dc.creatorMok, SMen_US
dc.creatorYan, Fen_US
dc.creatorChan, HLWen_US
dc.date.accessioned2014-12-11T08:27:42Z-
dc.date.available2014-12-11T08:27:42Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/442-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S.M. Mok, F. Yan, & H.L.W. Chan. Appl. Phys. Lett. 93, 023310 (2008) and may be found at http://link.aip.org/link/?apl/93/023310en_US
dc.subjectConducting polymersen_US
dc.subjectField effect transistorsen_US
dc.subjectNanocompositesen_US
dc.subjectNanoparticlesen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectPhototransistorsen_US
dc.subjectTitaniumen_US
dc.titleOrganic phototransistor based on poly(3-hexylthiophene)/TiO₂ nanoparticle compositeen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1en_US
dc.identifier.epage3en_US
dc.identifier.volume93en_US
dc.identifier.doi10.1063/1.2957981en_US
dcterms.abstractLight sensitive phototransistor based on the composite of poly(3-hexylthiophene) and TiO₂ nanoparticles has been developed. The device shows a quick change in channel current under light exposure, which can be attributed to a positive shift of the threshold voltage, while no change in the field effect mobility and off current can be observed. The shift of the threshold voltage is induced by accumulated electrons trapped by the TiO₂ nanoparticles in the channel. The photosensitivity of the device has been found to be dependent on the concentration of TiO₂ nanoparticles, the incident wavelength and the voltage between the source and drain.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 18 July 2008, v. 93, 023310, p. 1-3en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2008-07-18-
dc.identifier.isiWOS:000257796100118-
dc.identifier.scopus2-s2.0-47549105110-
dc.identifier.eissn1077-3118en_US
dc.identifier.rosgroupidr44877-
dc.description.ros2008-2009 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRA-
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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