Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4420
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dc.contributorDepartment of Applied Physics-
dc.creatorWang, DY-
dc.creatorLin, D-
dc.creatorKwok, KW-
dc.creatorChan, NY-
dc.creatorDai, J-
dc.creatorLi, S-
dc.creatorChan, HLW-
dc.date.accessioned2014-12-11T08:24:37Z-
dc.date.available2014-12-11T08:24:37Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4420-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D.Y. Wang et al., Appl. Phys. Lett. 98, 022902 (2011) and may be found at http://apl.aip.org/resource/1/applab/v98/i2/p022902_s1.en_US
dc.subjectDepositionen_US
dc.subjectElectric field measurementen_US
dc.subjectElectric fieldsen_US
dc.subjectFerroelectricityen_US
dc.subjectHysteresisen_US
dc.subjectPiezoelectricityen_US
dc.subjectPlatinumen_US
dc.subjectPulsed laser depositionen_US
dc.subjectSodiumen_US
dc.subjectThin film circuitsen_US
dc.subjectThin filmsen_US
dc.subjectVapor depositionen_US
dc.titleFerroelectric, piezoelectric, and leakage current properties of (K₀.₄₈Na₀.₄₈Li₀.₀₄)(Nb₀.₇₇₅Ta₀.₂₂₅)O₃ thin films grown by pulsed laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: D. Y. Wangen_US
dc.description.otherinformationAuthor name used in this publication: D. M. Linen_US
dc.description.otherinformationAuthor name used in this publication: K. W. Kwoken_US
dc.description.otherinformationAuthor name used in this publication: J. Y. Daien_US
dc.description.otherinformationAuthor name used in this publication: H. L. W. Chanen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume98-
dc.identifier.issue2-
dc.identifier.doi10.1063/1.3535608-
dcterms.abstractLead-free K₀.₄₈Na₀.₄₈Li₀.₀₄ Nb₀.₇₇₅Ta₀.₂₂₅ O₃ (KNLNT) thin films were deposited on Pt(111)/Ti/SiO₂/Si(001) substrates using pulsed laser deposition. The film exhibited a well-defined ferroelectric hysteresis loop with a remnant polarization 2P[sub r] of 22.6 µC/cm² and a coercive field E[sub c] of 10.3 kV/mm. The effective piezoelectric coefficient d[sub 33,f] of the KNLNT thin films was found to be about 49 pm/V by piezoelectric force microscope. The dominant conduction mechanisms of Au/KNLNT/Pt thin film capacitor were determined to be bulk-limited space-charge-limited-current and Poole–Frenkle emission at low and high electric field strengths, respectively, within a measured temperature range of 130–370 K.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 10 Jan. 2011, v. 98, no. 2, 022902, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2011-01-10-
dc.identifier.isiWOS:000286470800046-
dc.identifier.scopus2-s2.0-78751469038-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr55853-
dc.description.ros2010-2011 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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