Temperature dependence of broadband near-infrared luminescence from Ni2+-doped Ba0.5Sr0.5TiO3

Abstract

The dielectric and photoluminescence properties of Ni2+-doped Ba0.5Sr0.5TiO3 (BST) were studied at different temperatures. Under 350 nm excitation, the NIR luminescence band from 1200 nm to >1600 nm covers the optical communication window (O-L bands), with a typical bandwidth exceeding 200 nm. The crystal structure of Ni2+-doped BST evolves from rhombohedral to cubic when the temperature increases from 100 to 300 K. The luminescence properties are tightly correlated with the crystal structure of the host BST. The luminescence variations are mainly affected by phase transition induced crystal field change and nonradiative relaxation.