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Title: | Effect of lattice-misfit strain on the process-induced imprint behavior in epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃thin films | Authors: | Wu, W Wang, Y Pang, GKH Wong, KH Choy, CL |
Issue Date: | 30-Aug-2004 | Source: | Applied physics letters, 30 Aug. 2004, v. 85, no. 9, p. 1583-1585 | Abstract: | The effect of lattice-misfit strain on the process-induced imprint behavior in Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) capacitors with Pt (top), and SrRuO₃, La₀.₇Sr₀.₃MnO₃or LaNiO₃ (bottom) electrodes has been studied. With the different oxide electrodes and by changing the deposition oxygen pressure, various lattice-misfit strains in the epitaxial PZT films have been produced. It was found that after in situ annealing at reduced oxygen pressures, the capacitors showed an increased voltage offset in the polarization-electric field hysteresis loops with increasing the misfit strain, irrelevant to the oxide electrodes employed, while lattice disorder at the bottom interface can effectively eliminate the voltage shift. Our results suggest that the imprint behavior is caused by oxygen loss via dislocations generated by the misfit strain relaxation at the growth temperature. | Keywords: | Platinum Lead compounds Lanthanum compounds Strontium compounds Ferroelectric materials Ferroelectric thin films Ferroelectric capacitors Thin film capacitors Vacuum deposition Dislocations Stress relaxation Electrodes Lattice constants Annealing Dielectric hysteresis Internal stresses |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.1786662 | Rights: | © 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu et al., Appl. Phys. Lett. 85, 1583 (2004) and may be found at http://apl.aip.org/resource/1/applab/v85/i9/p1583_s1 |
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