Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4346
| Title: | Synthesis and memory effect study of Ge nanocrystals embedded in LaAlO₃ high-k dielectrics | Authors: | Lu, XB Lee, PF Dai, J |
Issue Date: | 16-May-2005 | Source: | Applied physics letters, 16 May 2005, v. 86, no. 20, 203111, p. 1-3 | Abstract: | A floating gate memory structure utilizing Ge nanocrystals embedded in LaAlO₃ (LAO) high-k dielectric films has been fabricated by pulsed-laser deposition. A cross-sectional high-resolution transmission electron microscopy study revealed that the floating gate structure contains 5-nm-diam spherelike Ge nanocrystals embedded in amorphous LAO. A significant memory effect with a very high density of charge storage up to 2×10¹ ³/cm² in the Ge nanocrystals and a maximum flat band voltage shift of 3.2 V have been achieved for the trilayer structure of LAO(8 nm)/Ge/LAO(3 nm)/Si. The memory structure utilizing the Ge nanocrystals grown in 1 min showed excellent charge retention characteristics, whereas the decay in memory capacitance after 10⁴ s of stress under a flat band voltage was only 8%. These results suggest that this memory structure utilizing Ge nanocrystals embedded in a LAO dielectric offers a high potential for the further scaling of floating gate memory devices. In addition, the effects of Ge growth time, and thus the size and density of the Ge nanocrystals, to the charge storage and charge retention characteristics were also studied. | Keywords: | Germanium Elemental semiconductors Semiconductor growth Nanostructured materials Lanthanum compounds Dielectric thin films Pulsed laser deposition Transmission electron microscopy Amorphous state |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.1926414 | Rights: | © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. B. Lu, P. F. Lee & J. Y. Dai, Appl. Phys. Lett. 86, 203111 (2005) and may be found at http://apl.aip.org/resource/1/applab/v86/i20/p203111_s1 |
| Appears in Collections: | Journal/Magazine Article |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Lu_Ge_Nanocrystals_LaAIO3.pdf | 147.12 kB | Adobe PDF | View/Open |
Access
View full-text via PolyU eLinks 
Page views
72
Last Week
1
1
Last month
Citations as of May 28, 2023
Downloads
203
Citations as of May 28, 2023
SCOPUSTM
Citations
46
Last Week
1
1
Last month
0
0
Citations as of May 25, 2023
WEB OF SCIENCETM
Citations
43
Last Week
0
0
Last month
0
0
Citations as of May 25, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.