Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4344
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dc.contributorDepartment of Applied Physics-
dc.creatorYan, Z-
dc.creatorZhou, XY-
dc.creatorPang, GKH-
dc.creatorZhang, T-
dc.creatorLiu, WL-
dc.creatorCheng, JG-
dc.creatorSong, ZT-
dc.creatorFeng, SL-
dc.creatorLai, LH-
dc.creatorChen, JZ-
dc.creatorWang, Y-
dc.date.accessioned2014-12-11T08:27:20Z-
dc.date.available2014-12-11T08:27:20Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4344-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. Yan et al., Appl. Phys. Lett. 90, 143503 (2007) and may be found at http://apl.aip.org/resource/1/applab/v90/i14/p143503_s1en_US
dc.subjectGolden_US
dc.subjectPlatinumen_US
dc.subjectZinc compoundsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectSputtered coatingsen_US
dc.subjectMultilayersen_US
dc.subjectThin film sensorsen_US
dc.subjectAcoustic resonatorsen_US
dc.subjectBulk acoustic wave devicesen_US
dc.subjectBiosensorsen_US
dc.subjectCrystal resonatorsen_US
dc.subjectSemiconductor devicesen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectX-ray diffractionen_US
dc.subjectTextureen_US
dc.titleZnO-based film bulk acoustic resonator for high sensitivity biosensor applicationsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: G. K. H. Pangen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume90-
dc.identifier.issue14-
dc.identifier.doi10.1063/1.2719149-
dcterms.abstractZinc oxide (ZnO)-based film bulk acoustic resonator consisting of a piezoelectric element (Au/ZnO/Pt) and a Bragg reflector (ZnO/Pt multilayer structure) has been fabricated by magnetron sputtering. The transmission electron microscopy and x-ray diffraction measurements revealed that all thin film layers in the device were well crystallized and highly textured. By electrical measurements, it was found that the device had a high resonant frequency (3.94 GHz) and mass sensitivity (8970 Hz cm²/ng). The use of the device as a biosensor was demonstrated by comparing the resonant properties of the device with/without coatings of biospecies.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 2 Apr. 2007, v. 90, no. 14, 143503, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2007-04-02-
dc.identifier.isiWOS:000245512200100-
dc.identifier.scopus2-s2.0-34047259667-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr33157-
dc.description.ros2006-2007 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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