Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/432
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorZhou, Xen_US
dc.creatorMiao, Jen_US
dc.creatorDai, Jen_US
dc.creatorChan, HLWen_US
dc.creatorChoy, CLen_US
dc.creatorWang, Yen_US
dc.creatorLi, Qen_US
dc.date.accessioned2014-12-11T08:28:00Z-
dc.date.available2014-12-11T08:28:00Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/432-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X.Y. Zhou et al. Appl. Phys. Lett. 90, 12902 (2007) and may be found at http://link.aip.org/link/?apl/90/12902en_US
dc.subjectMolecular beam epitaxial growthen_US
dc.subjectStrontium compoundsen_US
dc.subjectThin filmsen_US
dc.subjectLaser materials processingen_US
dc.subjectStrontiumen_US
dc.subjectX-ray diffractionen_US
dc.subjectInterface structureen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectSemiconductor-metal boundariesen_US
dc.subjectElectrical resistivityen_US
dc.subjectSiliconen_US
dc.subjectElemental semiconductorsen_US
dc.titleEpitaxial growth of SrTiO₃ thin film on Si by laser molecular beam epitaxyen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: X. Y. Zhouen_US
dc.description.otherinformationAuthor name used in this publication: J. Miaoen_US
dc.description.otherinformationAuthor name used in this publication: J. Y. Daien_US
dc.description.otherinformationAuthor name used in this publication: H. L. W. Chanen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Choyen_US
dc.description.otherinformationAuthor name used in this publication: Y. Wangen_US
dc.identifier.spage1en_US
dc.identifier.epage3en_US
dc.identifier.volume90en_US
dc.identifier.doi10.1063/1.2430407en_US
dcterms.abstractSrTiO₃ thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO₃ was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO₃/Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO₃ and the interfacial structure. Electrical measurements revealed that the SrTiO₃ film was highly resistive.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 3 Jan. 2007, v. 90, 012902, p. 1-3en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2007-01-03-
dc.identifier.isiWOS:000243379900070-
dc.identifier.scopus2-s2.0-33846040779-
dc.identifier.eissn1077-3118en_US
dc.identifier.rosgroupidr35092-
dc.description.ros2006-2007 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRA-
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
laser_molecular_07.pdf231.63 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

179
Last Week
1
Last month
Citations as of Aug 13, 2025

Downloads

452
Citations as of Aug 13, 2025

SCOPUSTM   
Citations

25
Last Week
0
Last month
0
Citations as of Dec 19, 2025

WEB OF SCIENCETM
Citations

22
Last Week
0
Last month
0
Citations as of Dec 18, 2025

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.