Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/429
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorWang, Den_US
dc.creatorWang, Yen_US
dc.creatorZhou, Xen_US
dc.creatorChan, HLWen_US
dc.creatorChoy, CLen_US
dc.date.accessioned2014-12-11T08:27:59Z-
dc.date.available2014-12-11T08:27:59Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/429-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D.Y. Wang et al. Appl. Phys. Lett. 86, 212904 (2005) and may be found at http://link.aip.org/link/?apl/86/212904en_US
dc.subjectBarium compoundsen_US
dc.subjectStrontium compoundsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectFerroelectric ceramicsen_US
dc.subjectPulsed laser depositionen_US
dc.subjectX-ray diffractionen_US
dc.subjectInternal stressesen_US
dc.subjectDielectric hysteresisen_US
dc.subjectFerroelectric Curie temperatureen_US
dc.titleEnhanced in-plane ferroelectricity in Ba₀.₇Sr₀.₃TiO₃ thin films grown on MgO (001) single-crystal substrateen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: D. Y. Wangen_US
dc.description.otherinformationAuthor name used in this publication: Y. Wangen_US
dc.description.otherinformationAuthor name used in this publication: X. Y. Zhouen_US
dc.description.otherinformationAuthor name used in this publication: H. L. W. Chanen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Choyen_US
dc.identifier.spage1en_US
dc.identifier.epage3en_US
dc.identifier.volume86en_US
dc.identifier.doi10.1063/1.1938247en_US
dcterms.abstractHighly oriented Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin films were grown on MgO (001) single-crystal substrate using pulsed-laser deposition and the in-plane ferroelectric properties of the film were evaluated. X-ray diffraction characterization revealed a good crystallinity and tensile in-plane stress in the film. A well-defined ferroelectric hysteresis loop with P[sub r]=9.5 µC/cm² was observed along the (100) direction, which implied an enhanced in-plane ferroelectricity in the Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin film in comparison with the Ba[sub 0.7]Sr[sub 0.3]TiO₃ ceramics. Curie temperature of the film was found to be ~88 °C, which is nearly 50 °C higher than that of the Ba[sub 0.7]Sr[sub 0.3]TiO₃ ceramics. The butterfly-shaped C-V characteristic curve also evidenced the enhanced in-plane ferroelectric property in the film, and a large dielectric tunability of 69% was found at 1 MHz under a moderate dc bias field. The observation of enhanced ferroelectricity along the in-plane direction in the highly oriented Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin film was explained in terms of the increased tetragonality (a/c =1.016) induced by the lattice misfit strain.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 23 May 2005, v. 86, 212904, p. 1-3en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2005-05-23-
dc.identifier.isiWOS:000229544200062-
dc.identifier.scopus2-s2.0-20844461113-
dc.identifier.eissn1077-3118en_US
dc.identifier.rosgroupidr20762-
dc.description.ros2004-2005 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRA-
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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