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http://hdl.handle.net/10397/428
Title: | Thickness dependence of in-plane dielectric and ferroelectric properties of Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin films epitaxially grown on LaAlO₃ | Authors: | Zhou, X Wang, D Zheng, RK Tian, H Qi, J Chan, HLW Choy, CL Wang, Y |
Issue Date: | 26-Mar-2007 | Source: | Applied physics letters, 26 Mar. 2007, v. 90, 132902, p. 1-3 | Abstract: | The authors have studied the effects of film thickness on the lattice strain and in-plane dielectric and ferroelectric properties of Ba[sub 0.7]Sr[sub 0.3]TiO₃ thin films epitaxially grown on LaAlO₃ (001) single crystal substrates. With increasing film thickness from 20 to 300 nm, the in-plane lattice parameter (a) increased from 0.395 to 0.402 nm while the out-of-plane lattice parameter (c) remained almost unchanged, which led to an increased a/c ratio (tetragonality) changing from 0.998 to 1.012 and consequently resulted in a shift of Curie temperature from 306 to 360 K associated with an increase of the in-plane remnant polarization and dielectric constant of the film. | Keywords: | Permittivity Barium compounds Strontium compounds Epitaxial layers Ferroelectric materials Ferroelectric thin films Lattice constants Ferroelectric Curie temperature |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | Rights: | © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X.Y. Zhou et al. Appl. Phys. Lett. 90, 132902 (2007) and may be found at http://link.aip.org/link/?apl/90/132902 |
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