Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4246
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dc.contributorDepartment of Applied Physics-
dc.creatorYao, Y-
dc.creatorLu, SG-
dc.creatorChen, H-
dc.creatorZhai, J-
dc.creatorWong, KH-
dc.date.accessioned2014-12-11T08:24:27Z-
dc.date.available2014-12-11T08:24:27Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4246-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Yao et al., J. Appl. Phys. 96, 569 (2004) and may be found at http://link.aip.org/link/?jap/96/569.en_US
dc.subjectPulsed laser depositionen_US
dc.subjectAntiferroelectric materialsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectLead compoundsen_US
dc.subjectLanthanum compoundsen_US
dc.subjectPermittivityen_US
dc.subjectSurface roughnessen_US
dc.subjectFatigueen_US
dc.titleRole of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.identifier.spage569-
dc.identifier.epage574-
dc.identifier.volume96-
dc.identifier.issue1-
dc.identifier.doi10.1063/1.1758312-
dcterms.abstractLanthanum-doped lead zirconate titanate stannate antiferroelectric thin films of ~420 nm with compositions in the antiferroelectric tetragonal region have been prepared on Pt-buffered Si substrates by pulsed laser deposition. Effects of oxygen pressure during deposition were studied, with emphasis placed on the electrical and dielectric properties of the films. The dielectric constant and the maximum polarization increased with the oxygen pressure during deposition, from 75 to 125 mTorr. So did the dielectric strength. This property enhancement with deposition oxygen pressure was believed to be due to the reduction of pyrochlore phase in the films. However, increasing the oxygen pressure beyond 150 mTorr during deposition had led to the increase of surface roughness, which eventually resulted in film cracking. It was also found that increasing the oxygen pressure did not benefit the fatigue performance in any appreciable way.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 July 2004, v. 96, no. 1, p. 569-574-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2004-07-01-
dc.identifier.isiWOS:000222093300091-
dc.identifier.scopus2-s2.0-3142700720-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr23532-
dc.description.ros2004-2005 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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