Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4245
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dc.contributorDepartment of Applied Physics-
dc.creatorWu, W-
dc.creatorWong, KH-
dc.creatorChoy, CL-
dc.date.accessioned2014-12-11T08:23:28Z-
dc.date.available2014-12-11T08:23:28Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4245-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu, K. H. Wong & C. L. Choy, Appl. Phys. Lett. 85, 5013 (2004) and may be found at http://apl.aip.org/resource/1/applab/v85/i21/p5013_s1en_US
dc.subjectLead compoundsen_US
dc.subjectEpitaxial layersen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectThin film capacitorsen_US
dc.subjectFerroelectric capacitorsen_US
dc.subjectElectrodesen_US
dc.subjectDielectric polarisationen_US
dc.subjectDielectric hysteresisen_US
dc.subjectFerroelectric Curie temperatureen_US
dc.subjectInternal stressesen_US
dc.subjectLanthanum compoundsen_US
dc.subjectStrontium compoundsen_US
dc.subjectAnnealingen_US
dc.titleInterface-oxygen-loss-controlled voltage offsets in epitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃ thin-film capacitors with La₀.₇Sr₀.₃MnO₃ electrodesen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Choyen_US
dc.identifier.spage5013-
dc.identifier.epage5015-
dc.identifier.volume85-
dc.identifier.issue21-
dc.identifier.doi10.1063/1.1827929-
dcterms.abstractEpitaxial Pb(Zr₀.₅₂Ti₀.₄₈)O₃(PZT) thin-film capacitors with La₀.₇Sr₀.₃MnO₃(LSMO) electrodes have been grown on (LaAlO₃)₀.₃(SrAl₀.₅Ta₀.₅O₃)₀.₇ (001) substrates by pulsed-laser deposition. The process-induced imprint behavior in the ferroelectric capacitors was examined by in situ and ex situ annealing at various conditions. It was found that for the capacitors in situ annealed at reduced oxygen pressures, where the LSMO electrodes are stable, voltage offsets in the polarization-electric field hysteresis loops were observed only for those treated at temperatures higher than the Curie temperature. At lower temperatures, the oxygen loss may be suppressed by stresses arising primarily from the paraelectric-to-ferroelectric transformation. However, for the capacitors ex situ annealed at the same low temperature, large voltage offsets were induced due to the oxygen instability of the LSMO electrodes. We show evidence that the imprint is caused by oxygen loss at the PZT∕LSMO interface, and closely related to the variation of the PZT structure.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 22 Nov. 2004, v. 85, no. 21, p. 5013-5015-
dcterms.isPartOfApplied physics letters-
dcterms.issued2004-11-22-
dc.identifier.isiWOS:000225300600062-
dc.identifier.scopus2-s2.0-19144366885-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr24414-
dc.description.ros2004-2005 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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