Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4243
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dc.contributorDepartment of Applied Physics-
dc.creatorOng, HC-
dc.creatorDai, J-
dc.date.accessioned2014-12-11T08:23:02Z-
dc.date.available2014-12-11T08:23:02Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4243-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H. C. Ong & J. Y. Dai, Appl. Phys. Lett. 81, 1444 (2002) and may be found at http://apl.aip.org/resource/1/applab/v81/i8/p1444_s1en_US
dc.subjectMagnesium compoundsen_US
dc.subjectZinc compoundsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectPulsed laser depositionen_US
dc.subjectSemiconductor epitaxial layersen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectEnergy gapen_US
dc.subjectVisible spectraen_US
dc.subjectInfrared spectraen_US
dc.subjectSemiconductor growthen_US
dc.titleStructural and optical properties of wurtzite Mg[sub x]Zn[sub 1-x]S(≤x≤0.25) films grown on (0001) Al₂O₃ by pulsed-laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: J. Y. Daien_US
dc.identifier.spage1444-
dc.identifier.epage1446-
dc.identifier.volume81-
dc.identifier.issue8-
dc.identifier.doi10.1063/1.1502191-
dcterms.abstractWurtzite Mg[sub x]Zn[sub 1-x]S(≤x≤0.25) thin films have been epitaxially grown on (0001) Al₂O₃ using pulsed-laser deposition. High-quality films can be prepared at a growth temperature of 450–550 °C with (0001) ω-rocking curve full width at half maximum as narrow as 0.09°. High-resolution cross-sectional transmission electron microscopy of the films deposited at 500 °C shows the presence of the mixture of zinc-blende and wurtzite phases at the interface, and therefore the interfacial region is highly defective. However, above the critical thickness of ∼5 nm, the film bulk consists of pure wurtzite material with a very high level of crystallinity. The band edge of Mg[sub x]Zn[sub 1-x]S films examined by transmission spectroscopy at room temperature increases from 3.75 eV at x = 0 to 3.95 at x = 0.25.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 19 Aug. 2002, v. 81, no. 8, p. 1444-1446-
dcterms.isPartOfApplied physics letters-
dcterms.issued2002-08-19-
dc.identifier.isiWOS:000177351600026-
dc.identifier.scopus2-s2.0-79956017745-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr13193-
dc.description.ros2002-2003 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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