Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/421
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Wang, J | - |
dc.creator | Tang, X | - |
dc.creator | Chan, HLW | - |
dc.creator | Choy, CL | - |
dc.creator | Luo, H | - |
dc.date.accessioned | 2014-12-11T08:27:43Z | - |
dc.date.available | 2014-12-11T08:27:43Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/421 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Wang et al. Appl. Phys. Lett. 86, 152907 (2005) and may be found at http://link.aip.org/link/?apl/86/152907 | en_US |
dc.subject | Lead compounds | en_US |
dc.subject | Relaxor ferroelectrics | en_US |
dc.subject | Dielectric relaxation | en_US |
dc.subject | Permittivity | en_US |
dc.subject | Hopping conduction | en_US |
dc.title | Dielectric relaxation and electrical properties of 0.94Pb(Fe[sub ½]Nb[sub ½])O₃-0.06PbTiO₃ single crystals | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: X. G. Tang | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 86 | - |
dcterms.abstract | Dielectric response and electrical conduction properties of 0.94Pb(Fe[sub ½]Nb[sub ½])O₃-0.06PbTiO₃ single crystals grown by the Bridgman method were studied. It was found that the single crystals did not show any sign of the presence of Curie temperature between room temperature and 300 °C. However, they exhibited very high dielectric constant at a frequency lower than 100 kHz, in the order of 10[sup 5]. Relaxation occurred at higher frequencies with a large decrease in dielectric constant, to about 1500. The thermal activation energy for relaxation was found to be ~0.17 eV, which is quite close to that for ac conductivity. It followed that the relaxation was attributed to the carriers hopping conduction, which is related to the possible jump motion of additional 3d electron between the equivalent positions of Fe ions. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 7 Apr. 2005, v. 86, 152907, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2005-04-07 | - |
dc.identifier.isi | WOS:000228901600081 | - |
dc.identifier.scopus | 2-s2.0-20844448869 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r24263 | - |
dc.description.ros | 2004-2005 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | VoR allowed | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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dielectric_relaxation_05.pdf | 73.06 kB | Adobe PDF | View/Open |
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