Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4217
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dc.contributorDepartment of Applied Physics-
dc.creatorChen, XY-
dc.creatorWong, KH-
dc.creatorMak, CL-
dc.creatorYin, XB-
dc.creatorWang, M-
dc.creatorLiu, JM-
dc.creatorLiu, Z-
dc.date.accessioned2014-12-11T08:24:29Z-
dc.date.available2014-12-11T08:24:29Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4217-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. Y. Chen et al., J. Appl. Phys. 91, 5728 (2002) and may be found at http://link.aip.org/link/?jap/91/5728.en_US
dc.subjectMagnesium compoundsen_US
dc.subjectInsulating thin filmsen_US
dc.subjectPulsed laser depositionen_US
dc.subjectCrystal microstructureen_US
dc.subjectEtchingen_US
dc.titleSelective growth of (100)-, (110)-, and (111)-oriented MgO films on Si(100) by pulsed laser depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Maken_US
dc.description.otherinformationAuthor name used in this publication: J. M. Liuen_US
dc.description.otherinformationAuthor name used in this publication: Z. G. Liuen_US
dc.identifier.spage5728-
dc.identifier.epage5734-
dc.identifier.volume91-
dc.identifier.issue9-
dc.identifier.doi10.1063/1.1461059-
dcterms.abstractSelective growth of singly oriented (110)-, (100)-, and (111)-MgO films on Si(100)substrates were obtained by pulsed laser deposition. The effects of deposition temperature, ambient oxygen pressure, and etching of the substrate on the structural properties of the films were studied. It is found that the crystalline orientations of the MgO films are determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition and etching of the Si substrates only effect the crystalline quality. Both (110)- and (111)-oriented films show granular grain structures. The (100)-oriented films grown on etched Si substrates display similar granular structures. Those deposited on nonetched Si substrates, however, reveal distinctive columnar grains. The observed phenomena are discussed based on the theory of crystal growth. The mechanism of the orientation selection is attributed to the energy balance between the surface and the interface energies. The varied grain structures are explained by considering the mobility of adatoms in different situations.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 May 2002, v. 91, no. 9, p. 5728-5734-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2002-05-01-
dc.identifier.isiWOS:000175069000031-
dc.identifier.scopus2-s2.0-0036573295-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr10767-
dc.description.ros2001-2002 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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