Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4211
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dc.contributorDepartment of Applied Physics-
dc.creatorWang, SX-
dc.creatorHao, JH-
dc.creatorWu, Z-
dc.creatorWang, DY-
dc.creatorZhuo, Y-
dc.creatorZhao, X-
dc.date.accessioned2014-12-11T08:24:29Z-
dc.date.available2014-12-11T08:24:29Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4211-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S.-X. Wang et al., Appl. Phys. Lett. 91, 252908 (2007) and may be found at http://apl.aip.org/resource/1/applab/v91/i25/p252908_s1en_US
dc.subjectBarium compoundsen_US
dc.subjectBuffer layersen_US
dc.subjectDielectric lossesen_US
dc.subjectDielectric thin filmsen_US
dc.subjectLead compoundsen_US
dc.subjectMultilayersen_US
dc.subjectPermittivityen_US
dc.subjectStrontium compoundsen_US
dc.titleDielectric properties of Ba₀.₆Sr₀.₄TiO₃ thin films using Pb₀.₃Sr₀.₇TiO₃buffer layersen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: Jian-Hua Haoen_US
dc.description.otherinformationAuthor name used in this publication: Zhen-Ping Wuen_US
dc.description.otherinformationAuthor name used in this publication: Xing-Zhong Zhaoen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume91-
dc.identifier.issue25-
dc.identifier.doi10.1063/1.2827583-
dcterms.abstractBa₀.₆Sr₀.₄TiO₃ (BST) thin films buffered with Pb₀.₃Sr₀.₇TiO₃(PST) at each side of the interface contact with electrodes (PST/BST/PST) were deposited on Pt/Ti/SiO₂/Si substrates. The dielectric properties of the films were measured using planar Pt/PST/BST/PST/Pt/Ti/SiO2/Si capacitor structures. The existence of a PST layer between the BST and Pt electrode can improve the dielectric properties of the BST film. The loss tangent of the multilayered films annealed at 750 °C was found to be 0.016 at 1 MHz and room temperature. The films showed a ∼ 31.7% tunability of the permittivity at an applied bias field of 0.85 MV/cm. This suggests that such films have potential applications for integrated device applications.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 17 Dec. 2007, v. 91, no. 25, 252908, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2007-12-17-
dc.identifier.isiWOS:000251908100065-
dc.identifier.scopus2-s2.0-37549056937-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr37387-
dc.description.ros2007-2008 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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