Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4204
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dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorZheng, Y-
dc.creatorWang, B-
dc.creatorWoo, CH-
dc.date.accessioned2014-12-11T08:24:27Z-
dc.date.available2014-12-11T08:24:27Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4204-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Zheng, B. Wang & C. H. Woo, Appl. Phys. Lett. 89, 083115 (2006) and may be found at http://apl.aip.org/resource/1/applab/v89/i8/p083115_s1en_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectDislocationsen_US
dc.subjectThermal stressesen_US
dc.subjectDielectric polarisationen_US
dc.subjectFerroelectric transitionsen_US
dc.titleCritical thickness for dislocation generation during ferroelectric transition in thin film on a compliant substrateen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. H. Wooen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume89-
dc.identifier.issue8-
dc.identifier.doi10.1063/1.2338515-
dcterms.abstractThe formation energy of misfit dislocations in a ferroelectric thin film grown on compliant substrate is calculated based on the Landau-Devonshire formalism and Timosheko’s method for thermal stresses. The critical thickness is shown to change significantly according to the polarization in the film, leading to serious concerns, particularly for thick substrates, in the device design stage.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 21 Aug. 2006, v. 89, no. 8, 083115, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2006-08-21-
dc.identifier.isiWOS:000240035400096-
dc.identifier.scopus2-s2.0-33747866000-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr26796-
dc.description.ros2005-2006 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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