Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4204
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Electronic and Information Engineering | - |
dc.creator | Zheng, Y | - |
dc.creator | Wang, B | - |
dc.creator | Woo, CH | - |
dc.date.accessioned | 2014-12-11T08:24:27Z | - |
dc.date.available | 2014-12-11T08:24:27Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4204 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Zheng, B. Wang & C. H. Woo, Appl. Phys. Lett. 89, 083115 (2006) and may be found at http://apl.aip.org/resource/1/applab/v89/i8/p083115_s1 | en_US |
dc.subject | Ferroelectric thin films | en_US |
dc.subject | Dislocations | en_US |
dc.subject | Thermal stresses | en_US |
dc.subject | Dielectric polarisation | en_US |
dc.subject | Ferroelectric transitions | en_US |
dc.title | Critical thickness for dislocation generation during ferroelectric transition in thin film on a compliant substrate | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: C. H. Woo | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 89 | - |
dc.identifier.issue | 8 | - |
dc.identifier.doi | 10.1063/1.2338515 | - |
dcterms.abstract | The formation energy of misfit dislocations in a ferroelectric thin film grown on compliant substrate is calculated based on the Landau-Devonshire formalism and Timosheko’s method for thermal stresses. The critical thickness is shown to change significantly according to the polarization in the film, leading to serious concerns, particularly for thick substrates, in the device design stage. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 21 Aug. 2006, v. 89, no. 8, 083115, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2006-08-21 | - |
dc.identifier.isi | WOS:000240035400096 | - |
dc.identifier.scopus | 2-s2.0-33747866000 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r26796 | - |
dc.description.ros | 2005-2006 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Zheng_Thickness_Ferroelectric_Film.pdf | 294.52 kB | Adobe PDF | View/Open |
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