Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/417
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dc.contributorDepartment of Applied Physics-
dc.creatorYan, Fen_US
dc.creatorBao, Pen_US
dc.creatorWang, Yen_US
dc.creatorChan, HLWen_US
dc.creatorChoy, CLen_US
dc.date.accessioned2014-12-11T08:27:40Z-
dc.date.available2014-12-11T08:27:40Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/417-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Yan et al. Appl. Phys. Lett. 81, 4580 (2002) and may be found at http://link.aip.org/link/?apl/81/4580en_US
dc.subjectLead compoundsen_US
dc.subjectFerroelectric materialsen_US
dc.subjectPermittivityen_US
dc.subjectFerroelectric transitionsen_US
dc.subjectCoolingen_US
dc.subjectGrain sizeen_US
dc.subjectElectric domainsen_US
dc.titleCooling-rate-dependent dielectric properties of (Pb(Mg[sub ⅓]Nb[sub ⅔]) O₃)0.67(PbTiO₃)0.33 single crystals in ferroelectric phaseen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage4580en_US
dc.identifier.epage4582en_US
dc.identifier.volume81en_US
dc.identifier.issue24en_US
dc.identifier.doi10.1063/1.1527701en_US
dcterms.abstractThe dielectric properties of (Pb(Mg[sub ⅓]Nb[sub ⅔])O₃)0.67(PbTiO₃)0.33 single crystals in the temperature range from room temperature to 250 °C have been studied. A very sharp change of dielectric permittivity due to the spontaneous relaxor-ferroelectric phase transition was observed. The most interesting result is that the dielectric permittivity in ferroelectric phase is strongly dependent on the cooling rate across the relaxor-ferroelectric phase transition. We assume that the cooling rate can influence the grain size of ferroelectric subdomains in ferroelectric phase and can therefore influence the dielectric properties.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 9 Dec. 2002, v. 81, no. 24, p.4580-4582en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2002-12-09-
dc.identifier.isiWOS:000179611800028-
dc.identifier.scopus2-s2.0-0037049577-
dc.identifier.eissn1077-3118en_US
dc.identifier.rosgroupidr13586-
dc.description.ros2002-2003 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRA-
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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