Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4039
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorHao, JH-
dc.creatorLuo, Z-
dc.creatorGao, J-
dc.date.accessioned2014-12-11T08:23:32Z-
dc.date.available2014-12-11T08:23:32Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4039-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. H. Hao, Z. Luo & J. Gao, J. Appl. Phys. 100, 114017 (2006) and may be found at http://link.aip.org/link/?jap/100/114107.en_US
dc.subjectStrontium compoundsen_US
dc.subjectDielectric thin filmsen_US
dc.subjectEpitaxial layersen_US
dc.subjectInternal stressesen_US
dc.subjectPermittivityen_US
dc.subjectDielectric lossesen_US
dc.titleEffects of substrate on the dielectric and tunable properties of epitaxial SrTiO₃thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage5-
dc.identifier.volume100-
dc.identifier.issue11-
dc.identifier.doi10.1063/1.2392746-
dcterms.abstractTunable dielectric thin films of SrTiO₃(STO) were prepared on different single-crystalline substrates, including insulating LaAlO₃, conductive Nb-doped STO (NSTO), and superconducting YBa₂Cu₃O₇₋δ. Substrate effects including morphology, orientation, and lattice mismatch induced strains were investigated. We found that a change of substrate used for STO thin films can strongly affect the dielectric properties of STO thin films in terms of dielectric constant, loss tangent, and tunability. Effects of substrate properties on the temperature dependence of dielectric constant and loss tangent were investigated. At low temperatures, STO thin films under minimal strain yield high dielectric constant and low loss tangent while the thin films under either tensile or compressive strain exhibit the reduced dielectric constant and high loss. The tunability of about 77% in STO/NSTO system, close to the value found in STO single crystal, was observed at 10 K. Physical origin of observed phenomena was discussed.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 1 Dec. 2006, v. 100, no. 11, 114107, p. 1-5-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2006-12-01-
dc.identifier.isiWOS:000242887400120-
dc.identifier.scopus2-s2.0-33845767967-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr34040-
dc.description.ros2006-2007 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
Hao_Effects_substrate_dielectric.pdf144.04 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

53
Last Week
1
Last month
Citations as of Jun 26, 2022

Downloads

156
Citations as of Jun 26, 2022

SCOPUSTM   
Citations

19
Last Week
0
Last month
0
Citations as of Jun 30, 2022

WEB OF SCIENCETM
Citations

19
Last Week
0
Last month
0
Citations as of Jun 30, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.