Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4039
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Hao, JH | - |
dc.creator | Luo, Z | - |
dc.creator | Gao, J | - |
dc.date.accessioned | 2014-12-11T08:23:32Z | - |
dc.date.available | 2014-12-11T08:23:32Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4039 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. H. Hao, Z. Luo & J. Gao, J. Appl. Phys. 100, 114017 (2006) and may be found at http://link.aip.org/link/?jap/100/114107. | en_US |
dc.subject | Strontium compounds | en_US |
dc.subject | Dielectric thin films | en_US |
dc.subject | Epitaxial layers | en_US |
dc.subject | Internal stresses | en_US |
dc.subject | Permittivity | en_US |
dc.subject | Dielectric losses | en_US |
dc.title | Effects of substrate on the dielectric and tunable properties of epitaxial SrTiO₃thin films | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 5 | - |
dc.identifier.volume | 100 | - |
dc.identifier.issue | 11 | - |
dc.identifier.doi | 10.1063/1.2392746 | - |
dcterms.abstract | Tunable dielectric thin films of SrTiO₃(STO) were prepared on different single-crystalline substrates, including insulating LaAlO₃, conductive Nb-doped STO (NSTO), and superconducting YBa₂Cu₃O₇₋δ. Substrate effects including morphology, orientation, and lattice mismatch induced strains were investigated. We found that a change of substrate used for STO thin films can strongly affect the dielectric properties of STO thin films in terms of dielectric constant, loss tangent, and tunability. Effects of substrate properties on the temperature dependence of dielectric constant and loss tangent were investigated. At low temperatures, STO thin films under minimal strain yield high dielectric constant and low loss tangent while the thin films under either tensile or compressive strain exhibit the reduced dielectric constant and high loss. The tunability of about 77% in STO/NSTO system, close to the value found in STO single crystal, was observed at 10 K. Physical origin of observed phenomena was discussed. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 1 Dec. 2006, v. 100, no. 11, 114107, p. 1-5 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2006-12-01 | - |
dc.identifier.isi | WOS:000242887400120 | - |
dc.identifier.scopus | 2-s2.0-33845767967 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r34040 | - |
dc.description.ros | 2006-2007 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | VoR allowed | en_US |
Appears in Collections: | Journal/Magazine Article |
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Hao_Effects_substrate_dielectric.pdf | 144.04 kB | Adobe PDF | View/Open |
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