Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4028
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Electronic and Information Engineering | - |
dc.creator | Wang, B | - |
dc.creator | Woo, CH | - |
dc.date.accessioned | 2014-12-11T08:22:53Z | - |
dc.date.available | 2014-12-11T08:22:53Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4028 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in B. Wang & C. H. Woo, J. Appl. Phys. 100, 044114 (2006) and may be found at http://link.aip.org/link/?jap/100/044114. | en_US |
dc.subject | Ferroelectric thin films | en_US |
dc.subject | Dielectric polarisation | en_US |
dc.subject | Ferroelectric transitions | en_US |
dc.subject | Ginzburg-Landau theory | en_US |
dc.subject | Optical susceptibility | en_US |
dc.subject | Permittivity | en_US |
dc.subject | Ferroelectric Curie temperature | en_US |
dc.title | Curie-Weiss law in thin-film ferroelectrics | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: C. H. Woo | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 5 | - |
dc.identifier.volume | 100 | - |
dc.identifier.issue | 4 | - |
dc.identifier.doi | 10.1063/1.2336979 | - |
dcterms.abstract | The stationary self-polarization field of a thin film in an open circuit is analytically solved for temperatures near the para-/ferroelectric transformation within the Ginzburg-Landau theory. For second-order ferroelectrics, or first-order ferroelectrics with a sufficiently large elastic self-energy of the transformation strain, the solution is real and stable, from which the corresponding electric susceptibility of the film can be derived. A Curie-Weiss-type relation of the permittivity is obtained for both the supercritical and subcritical temperature regimes near the transition. In the paraelectric state, the Curie parameter of the thin film is found to be independent of its thickness, whereas in the ferroelectric state, its magnitude decreases rapidly with decreasing film thickness. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 15 Aug. 2006, v. 100, no. 4, 044114, p. 1-5 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2006-08-15 | - |
dc.identifier.isi | WOS:000240236800098 | - |
dc.identifier.scopus | 2-s2.0-33748319693 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r31203 | - |
dc.description.ros | 2006-2007 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Wang_Curie_weiss_law.pdf | 91.03 kB | Adobe PDF | View/Open |
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