Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4028
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dc.contributorDepartment of Electronic and Information Engineering-
dc.creatorWang, B-
dc.creatorWoo, CH-
dc.date.accessioned2014-12-11T08:22:53Z-
dc.date.available2014-12-11T08:22:53Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4028-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in B. Wang & C. H. Woo, J. Appl. Phys. 100, 044114 (2006) and may be found at http://link.aip.org/link/?jap/100/044114.en_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectDielectric polarisationen_US
dc.subjectFerroelectric transitionsen_US
dc.subjectGinzburg-Landau theoryen_US
dc.subjectOptical susceptibilityen_US
dc.subjectPermittivityen_US
dc.subjectFerroelectric Curie temperatureen_US
dc.titleCurie-Weiss law in thin-film ferroelectricsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: C. H. Wooen_US
dc.identifier.spage1-
dc.identifier.epage5-
dc.identifier.volume100-
dc.identifier.issue4-
dc.identifier.doi10.1063/1.2336979-
dcterms.abstractThe stationary self-polarization field of a thin film in an open circuit is analytically solved for temperatures near the para-/ferroelectric transformation within the Ginzburg-Landau theory. For second-order ferroelectrics, or first-order ferroelectrics with a sufficiently large elastic self-energy of the transformation strain, the solution is real and stable, from which the corresponding electric susceptibility of the film can be derived. A Curie-Weiss-type relation of the permittivity is obtained for both the supercritical and subcritical temperature regimes near the transition. In the paraelectric state, the Curie parameter of the thin film is found to be independent of its thickness, whereas in the ferroelectric state, its magnitude decreases rapidly with decreasing film thickness.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 15 Aug. 2006, v. 100, no. 4, 044114, p. 1-5-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2006-08-15-
dc.identifier.isiWOS:000240236800098-
dc.identifier.scopus2-s2.0-33748319693-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr31203-
dc.description.ros2006-2007 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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