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Title: A thermal model for static current characteristics of AlGaN/GaN high electron mobility transistors including self-heating effect
Authors: Chang, Y
Zhang, Y
Zhang, Y
Tong, KY
Issue Date: 15-Feb-2006
Source: Journal of applied physics, 15 Feb. 2006, v. 99, no. 4, 044501, p. 1-5
Abstract: A thermal model of AlGaN/GaN high electron mobility transistors HEMTs has been developed based on a quasi-two-dimensional numerical solution of Schrödinger’s equation coupled with Poisson’s equation. The static current characteristics of HEMT devices have been obtained with the consideration of the self-heating effect on related parameters including polarization, electron mobility, saturation velocity, thermal conductivity, drain and source resistance, and conduction-band discontinuity at the interface between AlGaN and GaN. The simulation results agree well with our experimental data. It has also been demonstrated that the reduction of the saturation drain current at high power dissipation is primarily due to the decrease of electron mobility in the channel. The proposed model is valuable for predicting and evaluating the performance of different device structures and packages for various applications.
Keywords: Aluminium compounds
Gallium compounds
III-V semiconductors
Wide band gap semiconductors
High electron mobility transistors
Schrodinger equation
Poisson equation
Thermal conductivity
Conduction bands
Electrical resistivity
Electron mobility
Semiconductor device models
Publisher: American Institute of Physics
Journal: Journal of applied physics 
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.2171776
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Chang et al., J. Appl. Phys. 99, 044501 (2006) and may be found at
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