Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/401
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physicsen_US
dc.contributorMaterials Research Centreen_US
dc.creatorWang, Yen_US
dc.creatorCheng, YLen_US
dc.creatorCheng, KCen_US
dc.creatorChan, HLWen_US
dc.creatorChoy, CLen_US
dc.creatorLiu, ZRen_US
dc.date.accessioned2014-12-11T08:28:02Z-
dc.date.available2014-12-11T08:28:02Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/401-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Wang et al. Appl. Phys. Lett. 85, 1580 (2004) and may be found at http://link.aip.org/link/?apl/85/1580.en_US
dc.subjectLead compoundsen_US
dc.subjectPiezoceramicsen_US
dc.subjectRelaxor ferroelectricsen_US
dc.subjectPiezoelectric thin filmsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectPulsed laser depositionen_US
dc.subjectPermittivityen_US
dc.subjectDielectric relaxationen_US
dc.subjectGrain sizeen_US
dc.subjectFerroelastic transitionsen_US
dc.subjectEpitaxial layersen_US
dc.titleIn-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔])O₃-0.35 PbTiO₃ thin films in a very wide frequency rangeen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: Y. Wangen_US
dc.description.otherinformationAuthor name used in this publication: H. L. W. Chanen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Choyen_US
dc.description.otherinformationAuthor name used in this publication: K. C. Chengen_US
dc.identifier.spage1580en_US
dc.identifier.epage1582en_US
dc.identifier.volume85en_US
dc.identifier.issue9en_US
dc.identifier.doi10.1063/1.1784517en_US
dcterms.abstractThe in-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔]O₃−0.35 PbTiO₃ thin films deposited on MgO by pulsed-laser ablation were determined over a wide frequency range and compared with single crystals and ceramics. Depressed values of the dielectric constant, induced diffused phase transition, dielectric relaxation, and nonlinear behaviors were observed in the films. The overall dielectric behaviors of the films were found to be a mixture of that of relaxor ferroelectrics and normal ferroelectrics. The correlation of the microstructural features (mechanical clamping, small grain size, and epitaxial nature) and the dielectric behaviors was discussed.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 30 Aug. 2004, v. 85, no. 9, p.1580-1582en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2004-08-30-
dc.identifier.isiWOS:000223555000044-
dc.identifier.scopus2-s2.0-4944220023-
dc.identifier.eissn1077-3118en_US
dc.identifier.rosgroupidr23519-
dc.description.ros2004-2005 > Academic research: refereed > Publication in refereed journalen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRA-
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
wide_frequency_04.pdf65.97 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

146
Last Week
0
Last month
Citations as of Apr 13, 2025

Downloads

88
Citations as of Apr 13, 2025

SCOPUSTM   
Citations

26
Last Week
0
Last month
0
Citations as of Jun 21, 2024

WEB OF SCIENCETM
Citations

25
Last Week
0
Last month
0
Citations as of Jun 5, 2025

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.