Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/390
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorKe, Sen_US
dc.creatorHuang, Hen_US
dc.creatorWang, Ten_US
dc.creatorFan, Hen_US
dc.creatorJie, Wen_US
dc.creatorChan, HLWen_US
dc.date.accessioned2014-12-11T08:27:31Z-
dc.date.available2014-12-11T08:27:31Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/390-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S. Ke et al. Appl. Phys. Lett. 91, 162901 (2007) and may be found at http://link.aip.org/link/?apl/91/162901en_US
dc.subjectCadmium compoundsen_US
dc.subjectDielectric polarisationen_US
dc.subjectDielectric relaxationen_US
dc.subjectDielectric resonanceen_US
dc.subjectFerroelectric semiconductorsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectPiezoelectricityen_US
dc.subjectZinc compoundsen_US
dc.titleSlow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystalsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1en_US
dc.identifier.epage3en_US
dc.identifier.volume91en_US
dc.identifier.doi10.1063/1.2799259en_US
dcterms.abstractThe piezoelectric response in Cd[sub 0.9]Zn[sub 0.1]Te (CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of 37 s, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in dielectrics.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 15 Oct. 2007, v. 91, 162901, p. 1-3en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2007-10-15-
dc.identifier.isiWOS:000250295700057-
dc.identifier.scopus2-s2.0-35548965107-
dc.identifier.eissn1077-3118en_US
dc.identifier.rosgroupidr38789-
dc.description.ros2007-2008 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRA-
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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