Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/330
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dc.contributorDepartment of Electrical Engineering-
dc.creatorZhang, Aen_US
dc.creatorChan, KTen_US
dc.creatorDemokan, Sen_US
dc.creatorChan, VWCen_US
dc.creatorChan, PCHen_US
dc.creatorChan, AHPen_US
dc.date.accessioned2014-12-11T08:27:16Z-
dc.date.available2014-12-11T08:27:16Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/330-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Zhang A. et al. Appl. Phys. Lett. 87, 101105 (2005) and may be found at http://link.aip.org/link/?apl/87/101105.en_US
dc.subjectSilicon compoundsen_US
dc.subjectOptical waveguidesen_US
dc.subjectPlasma CVDen_US
dc.subjectEtchingen_US
dc.subjectBirefringenceen_US
dc.subjectAnnealingen_US
dc.subjectStress effectsen_US
dc.titleAnnealing effects on the loss and birefringence of silicon oxynitride rectangular optical waveguidesen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: M. S. Demokanen_US
dc.identifier.spage1en_US
dc.identifier.epage3en_US
dc.identifier.volume87en_US
dc.identifier.doi10.1063/1.2037856en_US
dcterms.abstractSilicon oxynitride rectangular optical waveguides have been fabricated by plasma-enhanced chemical vapor deposition and dry etching. The propagation loss and polarization dependent loss in as-grown samples show a substantial reduction after the samples have been annealed. Birefringence measurements before and after annealing on waveguides of different widths suggest that the waveguide modal birefringence is strongly affected by both waveguide geometry and stress in the material. Hence, the modal birefringence can be minimized by designing the appropriate waveguide geometry to compensate for any stress effects.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 5 Sept 2005, v. 87, 101105, p. 1-3en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2005-09-05-
dc.identifier.isiWOS:000231614800005-
dc.identifier.scopus2-s2.0-24644524037-
dc.identifier.eissn1077-3118en_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRA-
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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