The structural and in-plane dielectric/ferroelectric properties of the epitaxial (Ba, Sr)(Zr, Ti)O3 thin films

Abstract

Epitaxial (Ba1-xSrx)(Zr0.1Ti 0.9)O3 (BSZT, x = 0 - 0.45) thin films were deposited on (LaAlO3)0.3(Sr2AlTaO6) 0.35 (LSAT) substrates by pulsed laser deposition. The experimental results demonstrate that the structural, dielectric, and ferroelectric properties of the BSZT thin films were greatly dependent on the strontium content. The BSZT thin films transformed from tetragonal to cubic phase when x≥ 0.35 at room temperature. The Curie temperature and room-temperature remnant polarization decrease with increasing strontium concentration. The optimal dielectric properties were found in (Ba0.55Sr 0.45)(Zr0.1Ti0.9)O3 thin films which is in paraelectric state, having tunability of 47% and loss tangent of 0.0338 under an electric field of 20 MV/m at 1 MHz. This suggests that BSZT thin film is a promising candidate for tunable microwave device applications.