Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/2512
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Ke, S | - |
dc.creator | Huang, H | - |
dc.date.accessioned | 2014-12-11T08:27:07Z | - |
dc.date.available | 2014-12-11T08:27:07Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/2512 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S. Ke & H. Huang, J. Appl. Phys. 108, 064104 (2010) and may be found at http://link.aip.org/link/?jap/108/064104 | en_US |
dc.subject | Ceramics | en_US |
dc.subject | Dielectric materials | en_US |
dc.subject | Domain boundaries | en_US |
dc.subject | Grain size | en_US |
dc.title | Giant low frequency dielectric tunability in high-k Ba (Fe₁/₂Nb₁/₂)O₃ceramics at room temperature | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 6 | - |
dc.identifier.volume | 108 | - |
dc.identifier.issue | 6 | - |
dc.identifier.doi | 10.1063/1.3487472 | - |
dcterms.abstract | The effect of electric field on the dielectric properties of high-k Ba (Fe₁/₂Nb₁/₂)O₃ceramics with different grain sizes is reported. A low frequency giant dielectric tunability (>85%) can be obtained under a bias field as low as 50 V/mm. The results suggest that the giant dielectric tunability originates from extrinsic contributions such as domain boundary and oxygen defect relaxations. These findings provide a clear understanding to the complicated dielectric response in a family of high-k ceramics and a key to the high tunability of nonferroelectrics under low electric fields, which is attractive for potential applications in tunable devices. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 15 Sept. 2010, v. 108, no. 6, 064104, p. 1-6 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2010-09-15 | - |
dc.identifier.isi | WOS:000282646400110 | - |
dc.identifier.scopus | 2-s2.0-77957745974 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r54860 | - |
dc.description.ros | 2010-2011 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | VoR allowed | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
JApplPhys_108_064104.pdf | 1.19 MB | Adobe PDF | View/Open |
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