Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/2507
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Huang, W | - |
dc.creator | Dai, J | - |
dc.creator | Hao, JH | - |
dc.date.accessioned | 2014-12-11T08:22:38Z | - |
dc.date.available | 2014-12-11T08:22:38Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/2507 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Huang, J. Y. Dai & J. H. Hao, Appl. Phys. Lett. 97, 162905 (2010) and may be found at http://link.aip.org/link/?apl/97/162905 | en_US |
dc.subject | Buffer layers | en_US |
dc.subject | Gallium arsenide | en_US |
dc.subject | III-V semiconductors | en_US |
dc.subject | II-VI semiconductors | en_US |
dc.subject | Molecular beam epitaxial growth | en_US |
dc.subject | Semiconductor heterojunctions | en_US |
dc.subject | Strontium compounds | en_US |
dc.subject | Zinc compounds | en_US |
dc.title | Structural and resistance switching properties of ZnO₃/ SrTiO/GaAs heterostructure grown by laser molecular beam epitaxy | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: J. Y. Dai | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 97 | - |
dc.identifier.issue | 16 | - |
dc.identifier.doi | 10.1063/1.3505136 | - |
dcterms.abstract | ZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO₃(STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric characteristics of the heterostructure have been investigated. The current-voltage characteristic of the heterostructure reveals an asymmetric and resistance switching behavior, exhibiting a temperature-dependent resistance hysteresis in the temperature range of 50–300 K. These measured properties could be attributed to the charge effect at the interface of the heterostructure. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 18 Oct. 2010, v. 97, no. 16, 162905, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2010-10-18 | - |
dc.identifier.isi | WOS:000283502100047 | - |
dc.identifier.scopus | 2-s2.0-77958514584 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r55882 | - |
dc.description.ros | 2010-2011 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | VoR allowed | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
ApplPhysLett_97_162905.pdf | 291 kB | Adobe PDF | View/Open |
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