Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2464
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dc.contributorDepartment of Applied Physics-
dc.creatorHerng, TS-
dc.creatorLau, SP-
dc.creatorWang, L-
dc.creatorZhao, BC-
dc.creatorYu, SF-
dc.creatorTanemura, M-
dc.creatorAkaike, A-
dc.creatorTeng, KS-
dc.date.accessioned2014-12-11T08:26:57Z-
dc.date.available2014-12-11T08:26:57Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/2464-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in T.S. Herng et al., Appl. Phys. Lett. 95, 012505 (2009) and may be found at http://link.aip.org/link/?apl/95/012505en_US
dc.subjectCarbonen_US
dc.subjectCurie temperatureen_US
dc.subjectFerromagnetic materialsen_US
dc.subjectHall effecten_US
dc.subjectHole densityen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectMagnetic momentsen_US
dc.subjectMagnetic semiconductorsen_US
dc.subjectMagnetic thin filmsen_US
dc.subjectMagnetoresistanceen_US
dc.subjectNegative resistanceen_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectSpin polarised transporten_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectZinc compoundsen_US
dc.titleMagnetotransport properties of p-type carbon-doped ZnO thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume95-
dc.identifier.issue1-
dc.identifier.doi10.1063/1.3176434-
dcterms.abstractCarbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO:C films was found to be around 1.35 μB per carbon atom. The ZnO:C films showed p-type conduction with a hole concentration of ~5 X 10¹⁷ cm⁻³. In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO:C films. The magnetotransport properties of the ZnO:C suggested that the films possessed charge carrier spin polarization.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 6 July, 2009, v. 95, no. 1, 012505, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2009-07-06-
dc.identifier.isiWOS:000267983200050-
dc.identifier.scopus2-s2.0-67650470305-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr49225-
dc.description.ros2009-2010 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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