Mesoscopic phenomena in Au nanocrystal floating gate memory structure

Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2454

Title:	Mesoscopic phenomena in Au nanocrystal floating gate memory structure
Authors:	Chan, KC Lee, PF Dai, J
Issue Date:	14-Sep-2009
Source:	Applied physics letters, 14 Sept., 2009, v. 95, no. 11, 113109, p. 1-3
Abstract:	A resonant tunneling process is demonstrated in the HfAlO/Au nanocrystals/HfAlO trilayer nonvolatile memory (NVM) structure on Si, where the electrons tunnel back and forth to the Au nanocrystals due to the various mesoscopic behaviors. The electron tunneling behavior in this trilayer structure exhibits dissimilar resemblance to those in double-barrier tunnel junctions taking into account of the correlation of Coulomb blockade effect. The observed specific tunneling process is beneficial in studying the interplays of various mesoscopic physics and application of single electron devices into NVM.
Keywords:	Nanocrystals Semiconducting silicon compounds Superconducting materials Tunnel junctions
Publisher:	American Institute of Physics
Journal:	Applied physics letters
ISSN:	0003-6951
EISSN:	1077-3118
DOI:	10.1063/1.3229885
Rights:	© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K.C. Chan, P.F. Lee and J.Y. Dai, Appl. Phys. Lett. 95, 113109 (2009) and may be found at http://apl.aip.org/resource/1/applab/v95/i11/p113109_s1
Appears in Collections:	Journal/Magazine Article

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