Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

Abstract

We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments.