Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/1632
| Title: | The parameters identification and validation for IGBT based on optimization algorithm | Authors: | Gao, Y Miao, Y Guo, S Wang, D |
Issue Date: | 2006 | Source: | 2006 2nd International Conference on Power Electronics Systems and Applications : Hong Kong, 12-14 November 2006, p. 91-95 | Abstract: | IGBT (Insulated Gate Bipolar Transistor) is becoming more and more popular in many power applications, since it offers a good compromise between on-state loss, switching loss and easy of use. To develop circuits and systems using theses devices, model and model parameters are needed for use in circuit simulations. This paper presents a procedure for identifying the most IGBT models parameters. As an example, the results of identified parameters of BUP302 are given. Based on the identification, the paper presents the method for parameters validation. At last, the conclusion was given. | Keywords: | Insulated gate bipolar transistors Optimisation Parameter estimation Semiconductor device models |
Publisher: | Power Electronics Research Centre, The Hong Kong Polytechnic University | ISBN: | 9623675445 | Rights: | Copyright © The Hong Kong Polytechnic University 2006 |
| Appears in Collections: | Conference Paper |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ICPESA_2006_91-95.pdf | 1.32 MB | Adobe PDF | View/Open |
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