Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/118457
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dc.contributorDepartment of Applied Physics-
dc.creatorCao, J-
dc.creatorLian, H-
dc.creatorWang, X-
dc.creatorHuang, Q-
dc.creatorDing, J-
dc.creatorXia, J-
dc.creatorWang, S-
dc.creatorHu, W-
dc.creatorWu, T-
dc.creatorDong, Q-
dc.date.accessioned2026-04-15T02:05:09Z-
dc.date.available2026-04-15T02:05:09Z-
dc.identifier.issn2766-8541-
dc.identifier.urihttp://hdl.handle.net/10397/118457-
dc.language.isoenen_US
dc.publisherJohn Wiley & Sons, Inc.en_US
dc.rightsThis is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en_US
dc.rights© 2026 The Author(s). Aggregate published by SCUT, AIEI, and John Wiley & Sons Australia, Ltd.en_US
dc.rightsThe following publication J. Cao, H. Lian, X. Wang, et al. “Plasmon-Doped Organic Heterojunction Optoelectronic Synapses for Near-Infrared Visual Memory and Neuromorphic Computing.” Aggregate 7, no. 3 (2026): e70319 is available at https://doi.org/10.1002/agt2.70319.en_US
dc.subjectGold nanorods (AuNRs)en_US
dc.subjectLocalized surface plasmon resonance (LSPR)en_US
dc.subjectNear-infrared (NIR) lighten_US
dc.subjectNeuromorphic computingen_US
dc.subjectOrganic optoelectronic synapsesen_US
dc.titlePlasmon-doped organic heterojunction optoelectronic synapses for near-infrared visual memory and neuromorphic computingen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume7-
dc.identifier.issue3-
dc.identifier.doi10.1002/agt2.70319-
dcterms.abstractThe explosive growth of artificial intelligence has intensified demands for new computing paradigms beyond conventional von Neumann architectures. In response, brain-inspired computing-in-memory technologies are emerging as a promising path forward. Here, we designed a two-terminal optical synaptic device utilizing organic heterojunctions doped with gold nanorods (AuNRs), leveraging the electric field enhancement innate to the localized surface plasmon resonance (LSPR) effect. The device doped with 1 wt% AuNRs demonstrates a markedly enhanced light absorption capacity in the near-infrared (NIR) region of 808 nm. The generation rate of photogenerated excitons increases by 16.8%, while the probability of exciton dissociation rises by 8.4%. The paired-pulse facilitation (PPF) index reaches 114.6% (Δt = 1 s), indicating heightened sensitivity to optical pulse parameters. Additionally, Hall effect measurements were performed to characterize the electrical properties of the PEDOT:PSS:AuNRs films. The carrier mobility of the doped films increased 20-fold compared to pristine PEDOT:PSS due to electron injection from AuNRs. This enhanced mobility contributes to faster synaptic response and higher conductance tunability in the synapse device, further supporting its performance in neuromorphic computing tasks. Furthermore, we successfully simulated the dynamic “learning–forgetting–relearning” processes associated with human visual memory. By exploiting the tunable conductance of the optimized synaptic device, we implemented both convolutional neural networks (CNNs) and convolutional spiking neural networks (CSNNs) for weight updates. After 100 and 150 training epochs, the system achieved recognition accuracies up to 98.57% for handwritten digits and 92.01% for dynamic gestures. This work presents an effective plasmon-doping approach to enhancing the performance of organic memristors and can be extended to other material systems.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationAggregate, Mar. 2026, v. 7, no. 3, e70319-
dcterms.isPartOfAggregate-
dcterms.issued2026-03-
dc.identifier.scopus2-s2.0-105032533390-
dc.identifier.eissn2692-4560-
dc.identifier.artne70319-
dc.description.validate202604 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_TAen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextWe thank the support from National Natural Science Foundation of China (Grant Numbers: 62174116, 61774109, and 92477120).en_US
dc.description.pubStatusPublisheden_US
dc.description.TAWiley (2026)en_US
dc.description.oaCategoryTAen_US
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