Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/117821
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Department of Applied Physics | - |
| dc.creator | Hu, L | - |
| dc.creator | Zhuge, X | - |
| dc.creator | Wang, J | - |
| dc.creator | Wei, X | - |
| dc.creator | Zhang, L | - |
| dc.creator | Chai, Y | - |
| dc.creator | Xue, X | - |
| dc.creator | Ye, Z | - |
| dc.creator | Zhuge, F | - |
| dc.date.accessioned | 2026-03-05T07:56:42Z | - |
| dc.date.available | 2026-03-05T07:56:42Z | - |
| dc.identifier.uri | http://hdl.handle.net/10397/117821 | - |
| dc.language.iso | en | en_US |
| dc.publisher | Wiley-VCH Verlag GmbH & Co. KGaA | en_US |
| dc.rights | © 2024 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited. | en_US |
| dc.rights | The following publication L. Hu, X. Zhuge, J. Wang, X. Wei, L. Zhang, Y. Chai, X. Xue, Z. Ye, F. Zhuge, Emerging Optoelectronic Devices for Brain-Inspired Computing. Adv. Electron. Mater. 2025, 11, 2400482 is available at https://doi.org/10.1002/aelm.202400482. | en_US |
| dc.subject | Brain-inspired neuromorphic computing | en_US |
| dc.subject | Memristors | en_US |
| dc.subject | Optoelectronic neurons | en_US |
| dc.subject | Optoelectronic synapses | en_US |
| dc.subject | Transistors | en_US |
| dc.title | Emerging optoelectronic devices for brain-inspired computing | en_US |
| dc.type | Journal/Magazine Article | en_US |
| dc.identifier.volume | 11 | - |
| dc.identifier.issue | 3 | - |
| dc.identifier.doi | 10.1002/aelm.202400482 | - |
| dcterms.abstract | Brain-inspired neuromorphic computing is recognized as a promising technology for implementing human intelligence in hardware. Neuromorphic devices, including artificial synapses and neurons, are regarded as essential components for the construction of neuromorphic hardware systems. Recently, optoelectronic neuromorphic devices are increasingly highlighted due to their potential applications in next-generation artificial visual systems, attributed to their integrated sensing, computing, and memory capabilities. In this review, recent advancements in optoelectronic synapses and neurons are examined, with an emphasis on their structural characteristics, operational principles, and the replication of neuromorphic functions. For optoelectronic synaptic devices, such as memristor- and transistor-based ones, attention is given to the two primary weight update modes: the light-electricity synergistic mode and the all-optical mode. Optoelectronic neurons are discussed in terms of different device types, including threshold switch neurons and semiconductor laser neurons. Last, the challenges that impede the progress of optoelectronic neuromorphic devices are identified, and potential future directions are suggested. | - |
| dcterms.accessRights | open access | en_US |
| dcterms.bibliographicCitation | Advanced electronic materials, Mar. 2025, v. 11, no. 3, 2400482 | - |
| dcterms.isPartOf | Advanced electronic materials | - |
| dcterms.issued | 2025-03 | - |
| dc.identifier.scopus | 2-s2.0-86000437151 | - |
| dc.identifier.eissn | 2199-160X | - |
| dc.identifier.artn | 2400482 | - |
| dc.description.validate | 202603 bcch | - |
| dc.description.oa | Version of Record | en_US |
| dc.identifier.FolderNumber | OA_Scopus/WOS | en_US |
| dc.description.fundingSource | Others | en_US |
| dc.description.fundingText | L.H. and X.G contributed equally to this work. This research was partially supported by the National Natural Science Foundation of China (Nos. U20A20209 and 62304228), the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB32050204), the China National Postdoctoral Program for Innovative Talents (No. BX2021326), the China Postdoctoral Science Foundation (No. 2021M703310), the Zhejiang Provincial Natural Science Foundation of China (No. LQ22F040003), the Ningbo Natural Science Foundation of China (Nos. 2021J139 and 2023J356), and the Open Project of State Key Laboratory of Environment-friendly Energy Materials (No. 20kfhg09). | en_US |
| dc.description.pubStatus | Published | en_US |
| dc.description.oaCategory | CC | en_US |
| Appears in Collections: | Journal/Magazine Article | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Hu_Emerging_Optoelectronic_Devices.pdf | 5.88 MB | Adobe PDF | View/Open |
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