Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/117808
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dc.contributorDepartment of Applied Physics-
dc.creatorYue, X-
dc.creatorXia, Y-
dc.creatorDing, D-
dc.creatorIo, WF-
dc.creatorHe, D-
dc.creatorHe, C-
dc.creatorWang, Y-
dc.creatorXue, H-
dc.creatorJin, Y-
dc.creatorYuan, M-
dc.creatorZhang, J-
dc.creatorHo, W-
dc.creatorXu, H-
dc.creatorKi, DK-
dc.creatorHao, J-
dc.creatorJin, C-
dc.creatorXie, M-
dc.date.accessioned2026-03-05T07:56:36Z-
dc.date.available2026-03-05T07:56:36Z-
dc.identifier.urihttp://hdl.handle.net/10397/117808-
dc.language.isoenen_US
dc.publisherInstitute of Physics Publishing Ltd.en_US
dc.rightsOriginal content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence (https://creativecommons.org/licenses/by/4.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en_US
dc.rights© 2025 The Author(s). Published by IOP Publishing Ltden_US
dc.rightsThe following publication Yue, X., Xia, Y., Ding, D., Io, W. F., He, D., He, C., Wang, Y., Xue, H., Jin, Y., Yuan, M., Zhang, J., Ho, W., Xu, H., Ki, D.-K., Hao, J., Jin, C., & Xie, M. (2025). Single-layer MoSeN – a synthetic Janus two-dimensional transition-metal compound grown by plasma-assisted molecular beam epitaxy. 2D Materials, 12(2), 025004 is available at https://doi.org/10.1088/2053-1583/ada626.en_US
dc.subjectCompoundsen_US
dc.subjectJanusen_US
dc.subjectMoSeNen_US
dc.subjectSingle-layeren_US
dc.subjectSyntheticen_US
dc.subjectTwo-dimensional transitionen_US
dc.titleSingle-layer MoSeN : a synthetic Janus two-dimensional transition-metal compound grown by plasma-assisted molecular beam epitaxyen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume12-
dc.identifier.issue2-
dc.identifier.doi10.1088/2053-1583/ada626-
dcterms.abstractTwo-dimensional (2D) nanomaterials hold immense application potentials such as in high-performance nano-electronics, and asymmetric 2D structures with inherent electric dipoles will extend the application promises. Yet synthesizing asymmetric 2D structures remains challenging. Herein, we report the first synthesis of single-layer (SL) hexagonal (H-) phase polar Janus MoSeN via nitrogen-plasma-assisted molecular beam epitaxy. This is a significant achievement given the incommensurate valence between Mo, Se, and N, and the inherent strain from the Janus architecture. Using an array of compositional and structural characterization methods, we establish the atomic configurations of the synthesized MoSeN SL, confirming that they are 2D Janus transition-metal chalcogen-nitrides rather than alloys. By employing density functional theory calculations and transport measurements, we explore the structural feasibility and offer insights into its electronic properties, demonstrating its metallic behavior with ohmic contact characteristics. Piezoresponse force microscopy measurements reveal vertical piezoelectricity and ferroelectric potentials from the Janus MoSeN SL. Therefore, it exhibits great potential for applications in, e.g. piezoelectric and ferroelectric devices, sensing technologies, and optoelectronic devices. This work not only addresses existing challenges in 2D nanomaterial research but also opens new avenues for the development of advanced functional materials.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitation2D materials, Apr. 2025, v. 12, no. 2, 025004-
dcterms.isPartOf2D Materials-
dcterms.issued2025-04-
dc.identifier.scopus2-s2.0-105002780651-
dc.identifier.eissn2053-1583-
dc.identifier.artn025004-
dc.description.validate202603 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Scopus/WOSen_US
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextWe are grateful to Xiong Wang and Xiaodong Cui for optical measurements. M. X., D. K., and J. H. acknowledge the financial supports by the Research Grant Council (RGC) of Hong Kong Special Administrative Region (HKSAR), China (Nos. AoE/P-701/20). M. X. also acknowledges the financial support from Guangdong Provincial Quantum Science Strategic Initiative (No. GDZX2301003). D. K. acknowledges the supports by the RGC, HKSAR (Nos. GRF 17300521, 17309722, and 17301424), and J. H. acknowledges the supports from the RGC, HKSAR (Nos. GRF 153025/19P and HKPFS No. PF20-46080). D. D. acknowledges the supports from National Natural Science Foundation of China (Nos. 62404199).en_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
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