Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/117483
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dc.contributorDepartment of Applied Physics-
dc.creatorLi, X-
dc.creatorPark, MH-
dc.creatorDai, JY-
dc.creatorYin, Y-
dc.date.accessioned2026-02-26T03:46:07Z-
dc.date.available2026-02-26T03:46:07Z-
dc.identifier.urihttp://hdl.handle.net/10397/117483-
dc.language.isoenen_US
dc.publisherElsevier BVen_US
dc.rights© 2025 The Authors. Published by Elsevier B.V. on behalf of The Chinese Ceramic Society. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).en_US
dc.rightsThe following publication Li, X., Park, M. H., Dai, J.-Y., & Yin, Y. (2025). HfO2-based thin films and devices. Journal of Materiomics, 11(6), 101125 is available at https://doi.org/10.1016/j.jmat.2025.101125.en_US
dc.titleHfO₂-based thin films and devicesen_US
dc.typeEditorial/Preface (Journal)en_US
dc.identifier.volume11-
dc.identifier.issue6-
dc.identifier.doi10.1016/j.jmat.2025.101125-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of materiomics, Nov. 2025, v. 11, no. 6, 101125-
dcterms.isPartOfJournal of materiomics-
dcterms.issued2025-11-
dc.identifier.scopus2-s2.0-105018940141-
dc.identifier.eissn2352-8478-
dc.identifier.artn101125-
dc.description.validate202602 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Scopus/WOSen_US
dc.description.fundingSourceSelf-fundeden_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
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