Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/117158
DC FieldValueLanguage
dc.contributorDepartment of Industrial and Systems Engineeringen_US
dc.contributorResearch Institute for Advanced Manufacturingen_US
dc.contributorMainland Development Officeen_US
dc.creatorZhang, Jen_US
dc.creatorQian, Len_US
dc.creatorYang, Wen_US
dc.creatorWang, Jen_US
dc.creatorYang, XSen_US
dc.date.accessioned2026-02-05T01:07:01Z-
dc.date.available2026-02-05T01:07:01Z-
dc.identifier.issn1359-6454en_US
dc.identifier.urihttp://hdl.handle.net/10397/117158-
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.subjectDislocationen_US
dc.subjectHigh entropy alloysen_US
dc.subjectInterfaceen_US
dc.subjectMolecular dynamicsen_US
dc.subjectPlasticityen_US
dc.titleDislocation nucleation and shear sliding at dual-phase high-entropy alloy semi-coherent interface with atomic complexityen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume293en_US
dc.identifier.doi10.1016/j.actamat.2025.121118en_US
dcterms.abstractInterface plays a prominent role in determining the deformation behavior of dual-phase lamellar microstructures, particularly in lamellar high-entropy alloys (HEAs) due to the inherent complexity of interfacial atomic structures. Here, we employed a combination of molecular dynamics, molecular statics, and Monte-Carlo simulations to examine the effects of interfacial lattice distortion (ILD) and interfacial chemical short-range ordering (ICSRO) on the dislocation nucleation and shear response at semi-coherent fcc/bcc interface in laminated AlCoCuFeNi HEAs. Our findings reveal that ILD introduces irregularities in the interfacial misfit, predominantly accommodating the misfit between two phases and reducing average interfacial disregistry. Besides, ICSRO differs from chemical short-range ordering in single-phase HEAs, with Fe/Cu elements showing clear preferences for bcc or fcc structural configurations, leading to significant element segregation and further reduction in interfacial disregistry. The synergistic effect of ILD and ICSRO disrupts the regularity of original misfit dislocation networks typically observed in bimetallic systems, making local areas with large disregistry as preferred dislocation nucleation sites, instead of the expected periodic misfit dislocations at the interface in conventional scenarios. Moreover, ILD and ICSRO significantly enhance shear resistance through pinning effect of random solute atoms and ICSRO clusters on the sliding pathway. Our results offer profound insight into the structure-property relationships of dual-phase HEA interfaces characterized by atomic complexity, enabling the development of HEAs with enhanced mechanical performance through the customization of their interfacial characteristics.en_US
dcterms.accessRightsembargoed accessen_US
dcterms.bibliographicCitationActa materialia, 1 July 2025, v. 293, 121118en_US
dcterms.isPartOfActa materialiaen_US
dcterms.issued2025-07-01-
dc.identifier.scopus2-s2.0-105004405761-
dc.identifier.eissn1873-2453en_US
dc.identifier.artn121118en_US
dc.description.validate202602 bchyen_US
dc.description.oaNot applicableen_US
dc.identifier.SubFormIDG000813/2025-11-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThis work was supported by the grants from the Research Grants Council of the Hong Kong Special Administrative Region, China (Nos. PolyU15210123 and PolyU15201424), PolyU grants (Nos. 1-W271 and 1-CD9D), and Guangdong Basic and Applied Basic Research Foundation (No. 2024A1515010781).en_US
dc.description.pubStatusPublisheden_US
dc.date.embargo2027-07-01en_US
dc.description.oaCategoryGreen (AAM)en_US
Appears in Collections:Journal/Magazine Article
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Embargo End Date 2027-07-01
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