Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/116739
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorWang, Ren_US
dc.creatorChen, Hen_US
dc.creatorWang, Hen_US
dc.creatorLiu, Ben_US
dc.creatorChen, Xen_US
dc.creatorCao, Jen_US
dc.creatorHan, Zen_US
dc.creatorYang, Zen_US
dc.creatorWang, XRen_US
dc.creatorZhao, Xen_US
dc.creatorXiao, Cen_US
dc.creatorYang, SAen_US
dc.creatorSong, Pen_US
dc.date.accessioned2026-01-16T00:53:30Z-
dc.date.available2026-01-16T00:53:30Z-
dc.identifier.urihttp://hdl.handle.net/10397/116739-
dc.language.isoenen_US
dc.publisherNature Publishing Groupen_US
dc.rights© The Author(s) 2025en_US
dc.rightsThis article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License, which permits any non-commercial use, sharing, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if you modified the licensed material. You do not have permission under this licence to share adapted material derived from this article or parts of it. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http:// creativecommons.org/licenses/by-nc-nd/4.0/.en_US
dc.rightsThe following publication Wang, R., Chen, H., Wang, H. et al. Nonvolatile electrical switching of nonreciprocal transport in ferroelectric polar metal WTe2. Nat Commun 16, 11298 (2025) is available at https://doi.org/10.1038/s41467-025-66464-7.en_US
dc.titleNonvolatile electrical switching of nonreciprocal transport in ferroelectric polar metal WTe₂en_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume16en_US
dc.identifier.doi10.1038/s41467-025-66464-7en_US
dcterms.abstractNonreciprocal charge transport in junction-free devices has gained strong research interest recently, due to its capabilities to reveal new quantum physics and potential in outperforming traditional junction-based nonreciprocal devices. While nonreciprocal transport has been reported in a wide range of materials due to various exotic physics, the direction of nonreciprocity is mostly fixed. A key capability that has not been established is the active control of the direction of nonreciprocity. Here by taking advantage of the unique and intrinsic coexistence of switchable ferroelectricity and magnetochiral anisotropy in few-layer polar metal WTe2, we demonstrate nonvolatile electrical switching of nonreciprocal transport. The direction of nonreciprocal transport is reversed upon electrical switching of the ferroelectric polarization, and the switching is nonvolatile, i.e., it can be maintained even without external voltages. The nonreciprocal transport in few-layer WTe2 is also highly tunable with electrostatic doping. Theoretical calculations reveal a nontrivial Drude-like mechanism for the reciprocity, with significant band geometrical contribution due to interband coherence. The demonstration of nonvolatile electrically switchable nonreciprocal transport provides a novel route to switch topological quantum physics and paves the way to programmable junction-free diodes.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationNature communications, 2025, v. 16, 11298en_US
dcterms.isPartOfNature communicationsen_US
dcterms.issued2025-
dc.identifier.eissn2041-1723en_US
dc.identifier.artn11298en_US
dc.description.validate202601 bchyen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextP.S. acknowledges start-up grant support from Nanyang Technological University and Singapore Ministry of Education Academic Research Fund Tier 2 (MOE-T2EP50122-0017) and Tier 1 (RG113/21, RG130/22, RG76/25) projects. S.A.Y. acknowledges support from HK PolyU Start-up fund (P0057929). X.Z. acknowledges the National Key R&D Program of China (2024YFE0109200, 2024YFA1410000). X.R.W. acknowledges support by the Singapore Ministry of Education (MOE) Academic Research Fund (AcRF) Tier 3 grant (MOE-MOET32023-0003) “Quantum Geometric Advantage”. C.X. acknowledges the support by National Natural Science Foundation of China (grant no.12574114) and the start-up funding from Fudan University.en_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
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