Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/116674
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorWang, Den_US
dc.creatorYin, Jen_US
dc.creatorLi, Yen_US
dc.creatorLi, Hen_US
dc.creatorWang, Men_US
dc.creatorGuo, Fen_US
dc.creatorJie, Wen_US
dc.creatorSong, Fen_US
dc.creatorHao, Jen_US
dc.date.accessioned2026-01-12T05:59:42Z-
dc.date.available2026-01-12T05:59:42Z-
dc.identifier.issn2766-8541en_US
dc.identifier.urihttp://hdl.handle.net/10397/116674-
dc.language.isoenen_US
dc.publisherJohn Wiley & Sons, Inc.en_US
dc.rights© 2025 The Author(s). Aggregate published by SCUT, AIEI, and John Wiley & Sons Australia, Ltd. This is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en_US
dc.rightsThe following publication D. Wang, J. Yin, Y. Li, et al. “Well-Designed Organic Semiconductors With Tunable Resistive Switching Behaviors for Multilevel Storage and Neuromorphic Computing.” Aggregate 6, no. 9 (2025): e70099 is available at https://doi.org/10.1002/agt2.70099.en_US
dc.subjectMultilevel storageen_US
dc.subjectNeuromorphic computingen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectResistive switchingen_US
dc.subjectThin filmsen_US
dc.titleWell-designed organic semiconductors with tunable resistive switching behaviors for multilevel storage and neuromorphic computingen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume6en_US
dc.identifier.issue9en_US
dc.identifier.doi10.1002/agt2.70099en_US
dcterms.abstractDesigning new materials with high-performance resistive switching (RS) behaviors and/or developing alternative means to modulate the RS behaviors are of great significance for information storage and neuromorphic computing. Herein, we present a novel strategy to design and synthesize furan-annulated naphthalenes for high-performance digital and analog RS behaviors through controlling substituents. By introducing an electron acceptor of trifluoromethyl on the phenyl ring, 3-phenyl-4-(4-trifluoromethylphenyl)-2H-naphtho[1,8-bc]furan (TPNF) is synthesized with donor–acceptor (D–A) pairs by utilizing the electron donor of furyl in the naphthalene. Owing to the constructed D–A systems where electrons can be transported under the external bias voltage, the prepared TPNF thin films demonstrate high-performance bipolar digital RS behaviors with multilevel storage characteristics. On the other hand, if the substituent on the phenyl ring is replaced by an electron donor of methoxy, 4-(4-methoxyphenyl)-3-phenyl-2H-naphtho[1,8-bc]furan (MPNF) can be constructed with only electron-donor units of furyl and methoxy. The fabricated MPNF thin films show analog RS behaviors owing to the carrier trapping/detrapping from the nucleophilic trapping sites generated from the electron-donor units. The analog memristors demonstrate synaptic functions with high linearity of conductance modulation, which is highly desirable for neuromorphic computing. Such synaptic memristors based on MPNF are completely capable of recognizing digit images with high accuracy (95.2%) and implementing decimal arithmetic of addition, subtraction, multiplication, and division operations. This study provides a feasible way to modulate the RS properties by the strategy of introducing different substituents, demonstrating promising applications of such well-designed organic semiconductors for multilevel storage and neuromorphic computing.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationAggregate, Sept 2025, v. 6, no. 9, e70099en_US
dcterms.isPartOfAggregateen_US
dcterms.issued2025-09-
dc.identifier.scopus2-s2.0-105010897244-
dc.identifier.eissn2692-4560en_US
dc.identifier.artne70099en_US
dc.description.validate202601 bcjzen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_TA-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThis work was supported by the grants from the National Natural Science Foundation of China (No. 62474118, 52233014, and 62411560160), the Sichuan Science and Technology Program (No. 2022ZYD0041), and the PolyU grants (1-W22S and 1-CE0H). Dehui Wang and Jinxiang Yin contributed equally to this work.en_US
dc.description.pubStatusPublisheden_US
dc.description.TAWiley (2025)en_US
dc.description.oaCategoryTAen_US
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