Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/116258
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Department of Applied Physics | - |
| dc.creator | Tian, G | - |
| dc.creator | Zheng, S | - |
| dc.creator | Mo, Z | - |
| dc.creator | Xian, J | - |
| dc.creator | Chen, C | - |
| dc.creator | Fan, Z | - |
| dc.creator | Qin, M | - |
| dc.creator | Dai, JY | - |
| dc.creator | Wang, J | - |
| dc.creator | Liu, JM | - |
| dc.creator | Gao, X | - |
| dc.date.accessioned | 2025-12-05T06:28:38Z | - |
| dc.date.available | 2025-12-05T06:28:38Z | - |
| dc.identifier.issn | 1616-301X | - |
| dc.identifier.uri | http://hdl.handle.net/10397/116258 | - |
| dc.language.iso | en | en_US |
| dc.publisher | Wiley-VCH | en_US |
| dc.subject | BiFeO3 | en_US |
| dc.subject | Flexoelectric effect | en_US |
| dc.subject | Freestanding films | en_US |
| dc.subject | Topological domains | en_US |
| dc.title | Formation of polar topological domains in wrinkled bulges in freestanding BiFeO<sub>3</sub> thin films | en_US |
| dc.type | Journal/Magazine Article | en_US |
| dc.identifier.volume | 35 | - |
| dc.identifier.issue | 36 | - |
| dc.identifier.doi | 10.1002/adfm.202416311 | - |
| dcterms.abstract | This work presents a voltage-free strategy for creating and manipulating topological domains in freestanding BiFeO<inf>3</inf> films via the flexoelectric effect. By introducing bulge-like surface wrinkles into freestanding films, complexed polarization topological textures can be formed, i.e., center-type domain state with a cylinder bubble domain pattern along the vertical direction. This can be interpreted by the flexoelectric effect arising from the bulge topology, as verified by the phase-field simulation results. The observed center topological texture can also allow reversible switching between the center divergent state and the mosaic-like state driven by applying an electric field. The results provide a good example for the construction of topological domains via flexoelectric engineering, and offer opportunities for on-demand design of polar topological structures for certain nanoelectronics applications. | - |
| dcterms.accessRights | embargoed access | en_US |
| dcterms.bibliographicCitation | Advanced functional materials, 4 Sept 2025, v. 35, no. 36, 2416311 | - |
| dcterms.isPartOf | Advanced functional materials | - |
| dcterms.issued | 2025-09-04 | - |
| dc.identifier.scopus | 2-s2.0-105005164564 | - |
| dc.identifier.eissn | 1616-3028 | - |
| dc.identifier.artn | 2416311 | - |
| dc.description.validate | 202512 bcjz | - |
| dc.description.oa | Not applicable | en_US |
| dc.identifier.SubFormID | G000430/2025-11 | en_US |
| dc.description.fundingSource | Others | en_US |
| dc.description.fundingText | G.T. and S.Z. contributed equally to this work. The authors would like to thank the National Key Research and Development Programs of China (No. 2022YFB3807603), the National Natural Science Foundation of China (Nos. 92163210, U22A20117, 52402146), the Science and Technology Projects in Guangzhou (No. 202201000008), the Guangdong Basic and Applied Basic Research Foundation (Nos. 2023B1515130003, 2024A1515011608), the Postdoctoral Fellowship Program of CPSF (No. GZC20240519), the Scientific Research Cultivation Fund for Young Faculty of South China Normal University (No. 23KJ05), G.T. acknowledgements support from Hong Kong Scholar Program (No. XJ2022004). | en_US |
| dc.description.pubStatus | Published | en_US |
| dc.date.embargo | 2026-09-04 | en_US |
| dc.description.oaCategory | Green (AAM) | en_US |
| Appears in Collections: | Journal/Magazine Article | |
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