Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/116102
DC FieldValueLanguage
dc.contributorDepartment of Applied Biology and Chemical Technologyen_US
dc.contributorResearch Institute for Smart Energyen_US
dc.creatorLi, HFen_US
dc.creatorLiu, Jen_US
dc.creatorGeng, Sen_US
dc.creatorSun, Ten_US
dc.creatorLv, Zen_US
dc.creatorZhai, Yen_US
dc.creatorZhou, Yen_US
dc.creatorHan, STen_US
dc.date.accessioned2025-11-18T09:12:31Z-
dc.date.available2025-11-18T09:12:31Z-
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://hdl.handle.net/10397/116102-
dc.language.isoenen_US
dc.publisherWiley-VCHen_US
dc.subjectArtificial neuronen_US
dc.subjectMemristorsen_US
dc.subjectOptoelectronicsen_US
dc.subjectPerovskiteen_US
dc.subjectSpiking neural networksen_US
dc.titleA 2D-3D perovskite memristor-based light-induced sensitized neuron for visual information processingen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume37en_US
dc.identifier.issue42en_US
dc.identifier.doi10.1002/adma.202508342en_US
dcterms.abstractImplementing Leaky Integrate-and-Fire (LIF) neurons in hardware is poised to enable the creation of efficient, low-power spiking neural networks (SNNs). This is attributed to the ability of LIF neurons to mimic the rapid response and sensitivity of biological neurons, thereby reducing unnecessary computational resources. The fixed firing frequency of conventional LIF neurons limits their adaptability to complex, dynamic environments. Existing variable-frequency LIF neurons often require additional circuitry, which increases system complexity. In this study, a 2D-3D organic-inorganic hybrid perovskites (OHPs) memristor is presented, incorporating 2D passivation of methylammonium lead iodide (MAPbI3) with phenylethylammonium iodide (PEAI). The introduction of the 2D layer increases the migration energy barrier and restricts the diffusion of ions, thus enabling the modulation of the current decay and light responsivity. By leveraging the tunable decay and wavelength selectivity of the memristor, a light-induced sensitized neuron (LISN) with an enhanced firing frequency is developed using a fundamental circuit design. Furthermore, LISN, which exhibits improved temporal processing and long-term dependency management, are integrated into sensitized spiking neural networks (SSNNs) to demonstrate their superior classification capabilities. This study underscores the potential of LISN-based neuromorphic systems in visual information processing and offers new insights for applications in complex scenarios.en_US
dcterms.accessRightsembargoed accessen_US
dcterms.bibliographicCitationAdvanced materials, 23 Oct. 2025, v. 37, no. 42, e08342en_US
dcterms.isPartOfAdvanced materialsen_US
dcterms.issued2025-10-23-
dc.identifier.scopus2-s2.0-105012625598-
dc.identifier.eissn1521-4095en_US
dc.description.validate202511 bcjzen_US
dc.description.oaNot applicableen_US
dc.identifier.SubFormIDG000338/2025-08-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextS.-T.H. acknowledges the financial support from the Hong Kong Research Grants Council, Young Collaborative Research Grant (C5001-24), Research Institute for Smart Energy (U-CDC9), and Guangdong Provincial Department of Science and Technology (2024B1515040002). Y.Z. acknowledges grants from RSC Sustainable Laboratories Grant (L24-8215098370), Guangdong Basic and Applied Basic Research Foundation (2023A1515012479), the Science and Technology Innovation Commission of Shenzhen (JCYJ20220818100206013), RSC Researcher Collaborations Grant (C23-2422436283), State Key Laboratory of Radio Frequency Heterogeneous Integration (Independent Scientific Research Program No. 2024010), and NTUT-SZU Joint Research Program. This work was also supported by the National Natural Science Foundation of China (52373248), Guangdong Provincial Department of Science and Technology (2024A1515010006, and 2024A1515011718), Guangdong Basic and Applied Basic Research Foundation (2023A1515012479 and 2025A1515011274), and the Science and Technology Innovation Commission of Shenzhen (JCYJ20230808105900001, JCYJ20220531102214032, and 20231123155543001).en_US
dc.description.pubStatusPublisheden_US
dc.date.embargo2026-10-23en_US
dc.description.oaCategoryGreen (AAM)en_US
Appears in Collections:Journal/Magazine Article
Open Access Information
Status embargoed access
Embargo End Date 2026-10-23
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.