Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/115609
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dc.contributorDepartment of Applied Biology and Chemical Technology-
dc.creatorKai, HYen_US
dc.creatorWong, Ken_US
dc.creatorTanner, PAen_US
dc.date.accessioned2025-10-08T01:17:01Z-
dc.date.available2025-10-08T01:17:01Z-
dc.identifier.urihttp://hdl.handle.net/10397/115609-
dc.language.isoenen_US
dc.publisherWiley-VCH Verlag GmbH & Co. KGaAen_US
dc.rights© 2025 The Author(s). Advanced Optical Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en_US
dc.rightsThe following publication H.-Y. Kai, K.-L. Wong, P. A. Tanner, Tunneling in Persistent Luminescence. Adv. Optical Mater. 2025, 13, 2500793 is available at https://doi.org/10.1002/adom.202500793.en_US
dc.subjectAfterglowen_US
dc.subjectFading, localized transitionen_US
dc.subjectPersistent luminescenceen_US
dc.subjectThermoluminescenceen_US
dc.titleTunneling in persistent luminescenceen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume13en_US
dc.identifier.issue21en_US
dc.identifier.doi10.1002/adom.202500793en_US
dcterms.abstractAn overview of some key points in persistent luminescence (PersL) is provided with an emphasis on tunneling phenomena. Notably, key experimental criteria are provided that can substantiate the occurrence of thermal and athermal tunneling and localized transitions. These are elucidated by reference to a Case Study and to some other relevant works. Many experimental studies of PersL have assigned the mechanism to be tunneling on the basis of the linear relationship of PersL decay between intensity, I, and time, t−k, where k is a constant, or I−1 versus t. However, this relation also applies to the case where there is a uniform distribution of trap levels, which may be evident from the breadth of the TL peak. The key measurement for the assignment of below-conduction band processes is the absence of thermal conductivity.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationAdvanced optical materials, 25 July 2025, v. 13, no. 21, 2500793en_US
dcterms.isPartOfAdvanced optical materialsen_US
dcterms.issued2025-07-25-
dc.identifier.scopus2-s2.0-105008176484-
dc.identifier.eissn2195-1071en_US
dc.identifier.artn2500793en_US
dc.description.validate202510 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_TA-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextK.-L.W. acknowledges financial assistance from the Hong Kong Research Grants Council No. 12300021 and NSFC/RGC Joint Research Scheme (N_PolyU209/21). The authors are indebted to Dr. Waygen Thor for reading the manuscript and providing comments.en_US
dc.description.pubStatusPublisheden_US
dc.description.TAWiley (2025)en_US
dc.description.oaCategoryTAen_US
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