Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/114898
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dc.contributorDepartment of Applied Physicsen_US
dc.contributorResearch Centre for Nanoscience and Nanotechnologyen_US
dc.creatorPang, SYen_US
dc.creatorIo, WFen_US
dc.creatorWong, LWen_US
dc.creatorLao, Xen_US
dc.creatorBai, Qen_US
dc.creatorChan, KLen_US
dc.creatorZhao, Jen_US
dc.creatorHao, Jen_US
dc.date.accessioned2025-09-01T01:53:28Z-
dc.date.available2025-09-01T01:53:28Z-
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://hdl.handle.net/10397/114898-
dc.language.isoenen_US
dc.publisherWiley-VCH Verlag GmbH & Co. KGaAen_US
dc.rights© 2025 The Author(s). Advanced Functional Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License (http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.en_US
dc.rightsThe following publication S.-Y. Pang, W. F. Io, L.-W. Wong, et al. “ Fluoride-Free Molten Salt Hydrate-Assisted Synthesis of MXene in Air Down to 150 °C.” Adv. Funct. Mater. 35, no. 38 (2025): 2504864 is available at https://doi.org/10.1002/adfm.202504864.en_US
dc.subject2D materialsen_US
dc.subjectElectrocatalystsen_US
dc.subjectMolten salts hydratesen_US
dc.subjectMXenesen_US
dc.titleFluoride-free molten salt hydrate-assisted synthesis of MXene in air down to 150 °Cen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume35en_US
dc.identifier.issue38en_US
dc.identifier.doi10.1002/adfm.202504864en_US
dcterms.abstractThe conventional Lewis acid molten salt etching approach for synthesizing MXenes typically necessitates elevated temperatures exceeding 550 °C, in addition to the use of inert gas protection to prevent oxidation. Additionally, delamination of molten salt-etched MXenes typically requires hazardous intercalating agents. Herein, a scalable and non-toxic low-temperature shielded salt (LSS) approach for synthesizing MXene in air is reported, with the use of only a small portion of salts and a low reaction temperature down to 150 °C. Especially, the synergistic effect of the increased diffusion rate by Li+ ions and the phase change of magnesium chloride hexahydrate (MgCl2·6H2O) enables a redox-controlled A-site etching of the parent MAX phase, which even facilitates the synthesis of hard-to-etch MXenes. As a proof-of-concept demonstration, several theoretically hard-to-synthesize MXenes including Cr2CTx and Nb2CTx are successfully prepared through the LSS technique, where Cr2CTx is not achieved by Lewis acidic molten salt yet. Compared to conventional techniques, this low-temperature shielded salt etching method exhibits unconventional molten behavior while offering several advantages, including a non-oxidizing environment, shorter processing time, and elimination of highly corrosive washing agents and organic intercalants. These advances render the LSS approach a promising route for synthesizing MXenes with applications toward diverse practical applications.en_US
dcterms.abstractGraphical abstract: [Figure not available: see fulltext.]en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationAdvanced functional materials, 18 Sept 2025, v. 35, no. 38, 2504864en_US
dcterms.isPartOfAdvanced functional materialsen_US
dcterms.issued2025-09-18-
dc.identifier.scopus2-s2.0-105002433415-
dc.identifier.eissn1616-3028en_US
dc.identifier.artn2504864en_US
dc.description.validate202509 bcchen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_TA-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThis work was supported by the grants from the Research Grants Council of Hong Kong GRF No. 15303123, PDFS2324-5S09 and HKPFS No. PF20-46080, PolyU SRFS2122-5S02, AoE/P-701/20, PolyU Projects of RCNN 1-CE0H and 1-YWC0.en_US
dc.description.pubStatusPublisheden_US
dc.description.TAWiley (2025)en_US
dc.description.oaCategoryTAen_US
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