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| Title: | The detention performance enhancement of single gallium arsenide nanowire photodetector by nitrogen plasma treatment | Authors: | Huang, H Xu, D Li, T Gui, R Li, S Ip, WH Yung, KL |
Issue Date: | Jun-2025 | Source: | Nanotechnology, 23 June 2025, v. 36, no. 25, 255202 | Abstract: | 10.1088/1361-6528/ade244 | Keywords: | Department of Industrial and Systems Engineering | Publisher: | Nanotechnology | Journal: | 1361-6528 | EISSN: | 0957-4484 | DOI: | 10.1088/1361-6528/ade244 | Rights: | ©2025 The Author(s). Published by IOP Publishing Ltd Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license (https://creativecommons.org/licenses/by/4.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. The following publication Hao, H., Xu, D., Li, T., Gui, R., Li, S., Ip, W. H., & Yung, K. L. (2025). The Detention Performance Enhancement of Single Gallium Arsenide Nanowire Photodetector by Nitrogen Plasma Treatment. Nanotechnology, 36, 255202 is available at https://doi.org/10.1088/1361-6528/ade244. |
| Appears in Collections: | Journal/Magazine Article |
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