Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/113349
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Department of Electrical and Electronic Engineering | - |
| dc.creator | Wei, HL | - |
| dc.creator | Huang, H | - |
| dc.creator | Woo, CH | - |
| dc.creator | Zhang, XX | - |
| dc.creator | Zhou, LG | - |
| dc.date.accessioned | 2025-06-02T06:58:37Z | - |
| dc.date.available | 2025-06-02T06:58:37Z | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/10397/113349 | - |
| dc.language.iso | en | en_US |
| dc.publisher | AIP Publishing LLC | en_US |
| dc.rights | © 2004 American Institute of Physics. | en_US |
| dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in H. L. Wei, Hanchen Huang, C. H. Woo, X. X. Zhang, L. G. Zhou; Chemistry-mediated two-dimensional to three-dimensional transition of In thin films. Appl. Phys. Lett. 28 June 2004; 84 (26): 5401–5403 and may be found at https://doi.org/10.1063/1.1767595. | en_US |
| dc.title | Chemistry-mediated two-dimensional to three-dimensional transition of In thin films | en_US |
| dc.type | Journal/Magazine Article | en_US |
| dc.identifier.spage | 5401 | - |
| dc.identifier.epage | 5403 | - |
| dc.identifier.volume | 84 | - |
| dc.identifier.issue | 26 | - |
| dc.identifier.doi | 10.1063/1.1767595 | - |
| dcterms.abstract | The mechanism of chemistry-mediated two-dimensional to three-dimensional (2D-3D) transition during In thin film deposition was investigated. In was deposited on Au substrateusing magnetron sputtering technique. The formation of Au 3In on Au substrate resulted in the 2d-3D transition. It was observed that alloy formation leads to nonwetting of In, high mobility of In atoms and In clusters and well-separated In islands. The results show that structures of In and Au3 are characterized by scanning electron microscopy, transmission electron microscopy and electron diffraction. | - |
| dcterms.accessRights | open access | en_US |
| dcterms.bibliographicCitation | Applied physics letters, 28 June 2004, v. 84, no. 26, p. 5401-5403 | - |
| dcterms.isPartOf | Applied physics letters | - |
| dcterms.issued | 2004-06-28 | - |
| dc.identifier.scopus | 2-s2.0-3242732334 | - |
| dc.identifier.eissn | 1077-3118 | - |
| dc.description.validate | 202506 bcch | - |
| dc.description.oa | Version of Record | en_US |
| dc.identifier.FolderNumber | OA_Others | en_US |
| dc.description.fundingSource | RGC | en_US |
| dc.description.fundingSource | Others | en_US |
| dc.description.fundingText | The Focus Center—New York, Rensselaer: Interconnections for Gigascale Integration | en_US |
| dc.description.pubStatus | Published | en_US |
| dc.description.oaCategory | VoR allowed | en_US |
| Appears in Collections: | Journal/Magazine Article | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 5401_1_online.pdf | 1.25 MB | Adobe PDF | View/Open |
Access
View full-text via PolyU eLinks 
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.