Interface engineering and device applications of 2D ultrathin film/ferroelectric copolymer P(VDF-TrFE)

Abstract

Ferroelectric materials with switchable electrical polarization have been widely used in tunnel junctions, non-volatile memories, and field-effect transistors. Large-area organic ferroelectric polymers compatible with silicon or flexible substrates have played a crucial role in nanoelectronics. Poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) as a representative, different from traditional bulk oxide ferroelectrics in terms of atom arrangements and fabrication methods, has frequently been used as the ferroelectric gate for high-performance electronic, optical, and synaptic transistors. Ferroelectric copolymers have gradually become a promising and versatile alternative for inorganic ferroelectrics. This review will focus on the interface engineering and device applications of 2D materials/ferroelectric P(VDF-TrFE) hybrid structures. The intrinsic ferroelectric properties and unique features of P(VDF-TrFE) are first elucidated. Next, typical device structures with ferroelectric gating effect followed by its physical working mechanisms will be discussed. In the next section, diverse nanoelectronics applications of ferroelectric field effect transistors based on P(VDF-TrFE), including optoelectronic devices, non-volatile memories, neuromorphic computing, and negative capacitance transistors, are clarified. Moreover, existing challenges and further development for ferroelectric polymer will be discussed. With an emphasis on the ferroelectric polymer gate and related issues, this review provides a timely summary of current physical understanding and progresses. Comprehensive discussions on the gating effects of ferroelectric copolymer and related applications are still scarce. This review provides a systematical summary of ferroelectric copolymer P(VDF-TrFE). We also discuss emerging opportunities in terms of optoelectronic devices, nonvolatile memories, neuromorphic devices, andnegative capacitance transistors. Additionally, existing problems and promising prospects for 2D semiconductor/P(VDF-TrFE) devices are further proposed.