Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111886
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dc.contributorDepartment of Applied Biology and Chemical Technology-
dc.creatorZhang, M-
dc.creatorHuang, J-
dc.creatorWang, Z-
dc.creatorBalasubramanian, P-
dc.creatorYan, Y-
dc.creatorZhou, Y-
dc.creatorHan, ST-
dc.creatorLu, L-
dc.creatorZhang, M-
dc.date.accessioned2025-03-18T01:13:24Z-
dc.date.available2025-03-18T01:13:24Z-
dc.identifier.urihttp://hdl.handle.net/10397/111886-
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.rights© 2024 The Authors. This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/en_US
dc.rightsThe following publication M. Zhang et al., "Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations," in IEEE Journal of the Electron Devices Society, vol. 12, pp. 868-874 is available at https://doi.org/10.1109/JEDS.2024.3466956.en_US
dc.subjectInZnOen_US
dc.subjectMagnetron sputteringen_US
dc.subjectProcess optimizationen_US
dc.subjectThin-film transistorsen_US
dc.titlePerformance enhancement of indium zinc oxide thin-film transistors through process optimizationsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage868-
dc.identifier.epage874-
dc.identifier.volume12-
dc.identifier.doi10.1109/JEDS.2024.3466956-
dcterms.abstractThe device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (Vos) are precisely regulated. The optimized IZO TFTs can achieve the highest field effect mobility of ~71.8 cm2/Vs with a threshold voltage of ~-0.6 V. Reliability of IZO TFTs under positive/negative bias stress is also examined. The interface quality and the Vo are two key factors influencing the device performance and reliability, confirmed by X-ray photoelectron spectroscopy and atomic force microscopy analysis.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationIEEE Journal of the Electron Devices Society, 2024, v. 12, p. 868-874-
dcterms.isPartOfIEEE Journal of the Electron Devices Society-
dcterms.issued2024-
dc.identifier.scopus2-s2.0-85205145606-
dc.identifier.eissn2168-6734-
dc.description.validate202503 bcrc-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Scopus/WOSen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextin part by the Shenzhen Municipal Research Program; in part by the National Natural Science Foundation of China; in part by the Innovation and Technology Fund of Hong Kong under Grant; in part by the National Taipei University of Technology–Shenzhen University Joint Research Program; in part by the Independent Scientific Research Program from State Key Laboratory of Radio Frequency Heterogeneous Integration under Granten_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
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