Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111432
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dc.contributorDepartment of Mechanical Engineering-
dc.creatorChen, Y-
dc.creatorMeng, F-
dc.creatorLan, Z-
dc.creatorJia, B-
dc.creatorHuang, X-
dc.date.accessioned2025-02-27T04:12:20Z-
dc.date.available2025-02-27T04:12:20Z-
dc.identifier.urihttp://hdl.handle.net/10397/111432-
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.rights©2021 American Physical Societyen_US
dc.rightsThe following publication Chen, Y., Meng, F., Lan, Z., Jia, B., & Huang, X. (2021). Dual-Polarization Second-Order Photonic Topological Insulators. Physical Review Applied, 15(3), 034053 is available at https://doi.org/10.1103/PhysRevApplied.15.034053.en_US
dc.titleDual-polarization second-order photonic topological insulatorsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume15-
dc.identifier.issue3-
dc.identifier.doi10.1103/PhysRevApplied.15.034053-
dcterms.abstractSecond-order photonic topological insulators that host highly localized corner states resilient to defects, are opening alternative routes towards developing fascinating photonic devices. However, the existing works on second-order photonic topological insulators have mainly focused on either transverse-magnetic or transverse-electric modes. In this paper, we propose a dual-polarization topological photonic crystal structure for both transverse magnetic and transverse electric modes through topology optimization. Simple tight-binding lattice models are constructed to reveal the topological features of the optimized photonic crystal structure in a transparent way. The optimized dual-polarization second-order photonic topological insulator hosts four groups of corner states with different profiles and eigenfrequencies for both the transverse-magnetic and transverse-electric modes. Moreover, the robustness of these corner states against defects is explicitly demonstrated. Our results offer opportunities for developing polarization-independent topological photonic devices.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationPhysical review applied, Mar. 2021, v. 15, no. 3, 034053-
dcterms.isPartOfPhysical review applied-
dcterms.issued2021-03-
dc.identifier.scopus2-s2.0-85103465225-
dc.identifier.artn034053-
dc.description.validate202502 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Othersen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextHong Kong Scholars Program; Australian Research Council through the Discovery Project schemes; Industrial Transformation Training Centres schemeen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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