Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111317
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dc.contributorDepartment of Applied Physics-
dc.creatorHau, SKen_US
dc.creatorWong, KHen_US
dc.creatorChan, PWen_US
dc.creatorChoy, CLen_US
dc.date.accessioned2025-02-17T01:39:01Z-
dc.date.available2025-02-17T01:39:01Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/111317-
dc.language.isoenen_US
dc.publisherAIP Publishing LLCen_US
dc.rights© 1995 American Institute of Physics.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Hau, S. K., Wong, K. H., Chan, P. W., & Choy, C. L. (1995). Intrinsic resputtering in pulsed‐laser deposition of lead‐zirconate‐titanate thin films. Applied Physics Letters, 66(2), 245-247 and may be found at https://doi.org/10.1063/1.113560.en_US
dc.titleIntrinsic resputtering in pulsed‐laser deposition of lead‐zirconate‐titanate thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage245en_US
dc.identifier.epage247en_US
dc.identifier.volume66en_US
dc.identifier.issue2en_US
dc.identifier.doi10.1063/1.113560en_US
dcterms.abstractPulsed‐laser deposition (PLD) of lead‐zirconate‐titanate [Pb(Zrx,Ti1−x)O3] (PZT) thin films under low ambient pressure has been investigated by studying the angular deposition distributions of the constituent elements of the films. Nonstoichiometric profiles are observed and a dip occurs near the target surface normal of the deposition profile of lead. Experimental results show that intrinsic resputtering of the film is important in the PLD process and is responsible for the anomalous distribution of lead.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 9 Jan. 1995, v. 66, no. 2, p. 245-247en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued1995-01-09-
dc.identifier.scopus2-s2.0-36449002989-
dc.identifier.eissn1077-3118en_US
dc.description.validate202502 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextHong Kong Polytechnic Research Granten_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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