Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111316
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dc.contributorDepartment of Applied Physics-
dc.creatorOng, CWen_US
dc.creatorZhao, XAen_US
dc.creatorNg, YMen_US
dc.creatorChan, KFen_US
dc.creatorTsang, TCen_US
dc.creatorChoy, CLen_US
dc.creatorChan, PWen_US
dc.date.accessioned2025-02-17T01:39:00Z-
dc.date.available2025-02-17T01:39:00Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/111316-
dc.language.isoenen_US
dc.publisherAIP Publishing LLCen_US
dc.rights© 1996 American Institute of Physics.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Ong, C. W., Zhao, X. A., Ng, Y. M., Chan, K. F., Tsang, T. C., Choy, C. L., & Chan, P. W. (1996). Structural and mechanical properties of (B0.5−xSix)N0.5 films synthesized by dual‐ion‐beam deposition. Applied Physics Letters, 69(23), 3501-3503 and may be found at https://doi.org/10.1063/1.117225.en_US
dc.titleStructural and mechanical properties of (B₀.₅-ₓSiₓ)N₀.₅ films synthesized by dual‐ion‐beam depositionen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage3501en_US
dc.identifier.epage3503en_US
dc.identifier.volume69en_US
dc.identifier.issue23en_US
dc.identifier.doi10.1063/1.117225en_US
dcterms.abstractThe structural and mechanical properties of ion‐beam deposited (B0.5−xSix)N0.5 films (0≤x≤0.5) were characterized by x‐ray photoelectron spectroscopy, infrared absorption experiments, and nanoindentation tests. A single‐layer BN film (x=0) has 70 vol. % in cubic phase (c‐BN), and a hardness of 38 GPa. However, it peeled off very soon after deposition due to the high internal stress. If a buffer layer was deposited first, followed by a (B0.5−xSix)N0.5 film with x≊0.013, the whole configuration adhered very firmly to both quartz and silicon substrates. This improvement in adhesion was probably due to the formation of Si–N bonds, which served to release partly the stress inside the (B0.5−xSix)N0.5 films. Since the Si content was low, the film structure remained highly cubic, and there was no observable drop in hardness. For higher x, the cubic structure in (B0.5−xSix)N0.5 films disappeared rapidly and was replaced by a hexagonal structure. This structural change led to a rapid drop in hardness from 38 to 12 GPa. As x was further increased, more Si–N bonds were formed in the (B0.5−xSix)N0.5 layers. As a result, the hardness increased from the minimum value to a value ≊24 GPa.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 2 Dec. 1996, v. 69, no. 23, p. 3501-3503en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued1996-12-02-
dc.identifier.scopus2-s2.0-0040389781-
dc.identifier.eissn1077-3118en_US
dc.description.validate202502 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextHong Kong Polytechnic Universityen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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