Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/111307
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dc.contributorDepartment of Applied Physics-
dc.creatorZhu, XHen_US
dc.creatorLi, ADen_US
dc.creatorWu, Den_US
dc.creatorZhu, Ten_US
dc.creatorLiu, ZGen_US
dc.creatorMing, NBen_US
dc.date.accessioned2025-02-17T01:38:56Z-
dc.date.available2025-02-17T01:38:56Z-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10397/111307-
dc.language.isoenen_US
dc.publisherAIP Publishing LLCen_US
dc.rights© 2001 American Institute of Physics.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Zhu, X. H., Li, A. D., Wu, D., Zhu, T., Liu, Z. G., & Ming, N. B. (2001). High-resolution electron microscopy investigations on stacking faults in SrBi2Ta2O9 ferroelectric thin films. Applied Physics Letters, 78(7), 973-975 and may be found at https://doi.org/10.1063/1.1332106.en_US
dc.titleHigh-resolution electron microscopy investigations on stacking faults in SrBi₂Ta₂O₉ ferroelectric thin filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage973en_US
dc.identifier.epage975en_US
dc.identifier.volume78en_US
dc.identifier.issue7en_US
dc.identifier.doi10.1063/1.1332106en_US
dcterms.abstractStructural planar defects in the SrBi2Ta2O4 (SBT) films with 10 mol% excess Bi grown in Pt/TiO2/SiO2/Si substrates by metalorganic deposition have been observed by high-resolution electron microscopy. It was found that these stacking defects were planar defects with extra Bi-O planes normal to the c axis. These structural defects are expected to effectively improve the ferroelectric response and fatigue-resistance characteristics of SBT films because of the extra Bi-O planes having higher strucutral flexibility and alleviating the mechanical stresses and strains as well as injected-charge problems.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 12 Feb. 2001, v. 78, no. 7, p. 973-975en_US
dcterms.isPartOfApplied physics lettersen_US
dcterms.issued2001-02-12-
dc.identifier.scopus2-s2.0-0013119822-
dc.identifier.eissn1077-3118en_US
dc.description.validate202502 bcch-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Natural Science Foundation of China; National Laboratory of Solid State Microstructures (Nanjing University); State Key Program for Basic Research of Chinaen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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